LC element and semiconductor device having a signal transmission line and LC element manufacturing method

An LC element comprising:

• a first electrode having a predetermined shape functioning as a gate, said first electrode formed on an insulation layer on one side of a semiconductor substrate,
• a second electrode having a predetermined shape, said second electrode formed at a position essentially opposing said first electrode on an opposite side of said semiconductor substrate,
• a channel formed in said semiconductor substrate at an area corresponding to said first electrode,
• a first diffusion region formed near one end of the channel,
• a second diffusion region formed near the other end of said channel,
• inductors respectively formed from said channel and said second electrode,
• a distributed constant type capacitor formed between said channel and said second electrode, and
• a signal transmission line formed from at least said channel.

An LC element comprising:

• a first electrode functioning as a gate having a predetermined shape, said first electrode formed on an insulation layer on a semiconductor substrate,
• a second electrode having a predetermined shape, said second electrode formed on said semiconductor substrate at an area adjacent to said first electrode,
• a channel formed in said semiconductor substrate at an area corresponding to said first electrode,
• a diffusion region formed near one end of said channel,
• inductors respectively formed from said channel and said second electrode,
• a distributed constant type capacitor formed between said channel and said second electrode, and
• a signal transmission line formed from said second electrode.

An LC element comprising:

• a first electrode functioning as a gate having a predetermined shape, said first electrode formed on an insulation layer on a semiconductor substrate,
• a second electrode having a predetermined shape, said second electrode formed at an essentially opposing position to said first electrode on an opposite side of said semiconductor substrate,
• a channel formed in said semiconductor substrate at an area corresponding to said first electrode,
• a diffusion region formed near one end of said channel,
• inductors respectively formed from said channel and said second electrode,
• a distributed constant type capacitor formed between said channel and said second electrode, and
• a signal transmission line formed from said second electrode.