GaAs MIS device
AssigneesAsahi Kogyosha Co., Ltd., Kazuo Hattori, Fujitsu Limited
InventorsAkira Shibuya, Kazuo Hattori, Masashi Ozeki
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Abstract
A combination of a semiconductor region essentially consisting of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1), an insulating film formed on the surface of the semiconductor region and essentially consisting of GaAs.sub.x P.sub.y O.sub.z (w, y, z>0), and a passivation film formed on the insulating film and made of an insulating material different from the insulating film. The laminated insulating film has an extremely low leakage current. An excellent MISFET can be realized by forming a gate electrode on the surface of the laminated insulating film.
Claims16
A semiconductor device comprising:
- a Al.sub.x Ga.sub.1-x As (0<x.ltoreq.1) semiconductor region;
- and
- a GaAs.sub.w P.sub.y O.sub.z (w, y, z>0) insulating film formed on the surface of the semiconductor region.
A semiconductor device comprising:
- an In.sub.x Ga.sub.1-x As (0<x.ltoreq.0.3) semiconductor region;
- and
- a GaAs.sub.w P.sub.y O.sub.z (w, y, z>0) insulating film formed on the surface of the semiconductor region.
A semiconductor device comprising:
- an In.sub.x Ga.sub.1-x As (0<x.ltoreq.0.3) semiconductor region;
- and
- an insulating film on a surface of the semiconductor region formed by the reaction of said In.sub.x Ga.sub.1-x As with P.sub.2 O.sub.5.
A semiconductor device comprising:
- GaAs semiconductor region;
- a GaAs.sub.w P.sub.y O.sub.z (w, y, z>0) insulating film formed on the surface of the semiconductor region;
- and
- a passivation film formed on the insulating film.
Dependencies are inferred from the claim text.