Semiconductor device having ball-bonded pads
AssigneeMicron Semiconductor, Inc.
InventorJ. M. Brooks
Life of this patent
Estimating the term…
Abstract
An integrated circuit (IC) device comprises towers of bonded gold balls located on each bond pad. The towers allow for early encapsulation of the IC die. The IC can then be tested and attached to tab tape or a printed circuit board without particulate contamination concerns.
Claims21
A process for forming a semiconductor device, comprising the following steps:
- a) forming a semiconductor die having a back and a front, said front having pads thereon;
- b) forming a tower of conductive balls on at least one of said pads;
- c) providing a cavity bar holder having a cavity therein;
- d) forming a first layer of encapsulation material within said cavity, thereby partially filling said cavity with said first layer of encapsulation material;
- e) placing said back of said semiconductor die in contact with said first layer of encapsulation material;
- f) forming a second layer of encapsulation material within said cavity to cover said semiconductor die, thereby encapsulating said die with said first and second layers of encapsulation material and leaving a portion of each said tower exposed;
- and
- g) removing the encapsulated die from said cavity.
A process for forming a semiconductor device having no lead frame and no paddle, comprising the following steps:
- a) forming a semiconductor die having a back and a front, said front having pads thereon;
- b) forming a tower of conductive balls on at least one of said pads;
- c) providing a cavity bar holder having a cavity therein;
- d) forming a first layer of encapsulation material within said cavity;
- e) placing said back of said semiconductor die in contact with said first layer of encapsulation material;
- f) forming a second layer of encapsulation material within said cavity to cover said semiconductor die, said first layer of encapsulation material supporting said die during encapsulation of said die with said second encapsulation layer, thereby sealing said die with said first and second layers of encapsulation material and leaving a portion of each said tower exposed;
- and
- g) removing the encapsulated die from said cavity.
A process for forming a semiconductor device having no lead frame and no paddle, comprising the following steps:
- a) forming a semiconductor die having a back and a front, said front having pads thereon;
- b) forming a first conductive ball on at least one of said pads;
- c) welding a second conductive ball to each of said first conductive balls, and welding a third conductive ball to each of said second conductive balls, said first, second, and third conductive balls on each of said pads forming a tower;
- d) providing a cavity bar holder having a cavity therein;
- e) forming a first layer of encapsulation material within said cavity, thereby partially filling said cavity with said first layer of encapsulation material;
- f) placing said back of said semiconductor die in contact with said first layer of encapsulation material;
- g) forming a second layer of encapsulation material within said cavity to cover said semiconductor die, said first layer of encapsulation material supporting said die during encapsulation of said die with said second encapsulation layer, thereby sealing said die with said first and second layers of encapsulation material and leaving a portion of each said tower exposed;
- and
- h) removing said encapsulated die from said cavity.
A process for forming a semiconductor device, comprising the following steps:
- a) providing a cavity bar holder having a cavity therein;
- b) forming a first layer of encapsulation material within said cavity;
- c) placing a semiconductor die in contact with said first layer of encapsulation material;
- d) forming a second layer of encapsulation material within said cavity to encapsulate said die;
- and
- e) removing said encapsulated die from said cavity.
Dependencies are inferred from the claim text.