Method for manufacturing a semiconductor chip bump having improved contact characteristics

Abstract

A connection bump of a semiconductor chip is formed by a photoresist pattern. The photoresist pattern is obtained through an exposure process by which photolithography solution layers of positive and/or negative type are repeatedly exposed and thereafter developed to obtain a photoresist pattern corresponding to the connection bump. Since the upper portion of the manufactured bump is no larger than the lower portion thereof, the bumps do not contact each other even though the upper portion of the bump is stretched due to a pressure induced during a process of bonding internal leads in a TAB package. The connection bump formed according to the present invention has a high aspect ratio, thereby preventing the internal leads from contacting the semiconductor chip surface and advantageously facilitating the removal of the photoresist pattern after the bump formation process to simplify overall manufacturing process.

Dependencies are inferred from the claim text.