Process for forming a semiconductor region adjacent to an insulating layer
AssigneeMotorola, Inc.
InventorShih-Wei Sun
Life of this patent
Estimating the term…
Abstract
An insulating layer is formed over a first substrate. Trenches are formed within a second substrate, and those trenches are filled with an insulating layer. The two substrate are bonded at their insulating layers. The portion of the second substrate away from the trenches is removed to form semiconductor regions over the insulating layer of the first substrate. Embodiments of the present invention allow better thickness control for SOI regions and lower leakage current compared to SOI layers that use LOCOS-type field isolation.
Claims28
A process for forming a semiconductor region adjacent to an insulating layer comprising the steps of:
- forming a first insulating layer over a first substrate;
- forming a doped region within a second substrate, wherein:
- the doped region has a first conductivity type;.
- the second substrate has a second conductivity type that is opposite the first conductivity type;
- and
- this step is performed before bonding the first and second substrates;
- forming a trench within a second substrate, wherein the trench is no wider than 1.0 micron;
- forming a second insulating layer within the trench;
- bonding the first and second substrates together such that the first and second insulating layers are adjacent to each other;
- and
- removing a portion of the second substrate to expose portions of the second insulating layer to form a first active region from the doped region and a second active region from the second substrate, wherein:
- the first active region has the first conductivity type and the second active region has the second conductivity type;
- and
- the first and second active regions lie on opposite sides of the trench.
A process for forming a semiconductor region adjacent to an insulating layer comprising the steps of:
- forming a first insulating layer over a first substrate;
- forming trenches within a second substrate;
- forming a second insulating layer within the trenches and over the second substrate;
- planarizing the second insulating layer;
- bonding the first and second substrates together such that the first and second insulating layers are adjacent to each other;
- polishing the second substrate to remove most of the second substrate;
- and
- etching the second substrate to expose portions of the second insulating layer.
A process for forming a semiconductor region adjacent to an insulating layer comprising the steps of:
- forming a first insulating layer over a first substrate;
- forming trenches within a second substrate, wherein the trenches have a depth no deeper than 3000 angstroms;
- forming a second insulating layer within the trenches and over the second substrate;
- polishing the second insulating layer to form exposed portions of the second substrate;
- forming a third insulating layer over the exposed portions of the second substrate;
- bonding the first and second substrates together such that the first and third insulating layers are adjacent to each other;
- polishing the second substrate to remove most of the second substrate;
- and
- etching the second substrate to expose portions of the second insulating layer.
Dependencies are inferred from the claim text.