Highly producible magnetoresistive RAM process
AssigneeHoneywell Inc.
InventorsJerry Yue, Allan T. Hurst, Tangshiun Yeh, Huang-Joung Chen
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Abstract
A process for forming a magnetoresistive bit and an interconnection to an underlying component forms a pattern in an amorphous dielectric overlying the magnetic materials. Portions of the magnetic materials are removed to form a bit having a smooth bit edge profile by ion milling. The bit has a bit end located over the underlying component. A second amorphous dielectric layer is deposited and etched at the bit end to form a via at the underlying component. Conventional first metal is used to form the interconnection.
Claims15
A process for forming a magnetoresistive memory on a semiconductor substrate having an underlying integrated circuit component and an insulating layer formed thereover, and forming an interconnecting between said device and said underlying component, comprising the steps of:
- forming a first insulating layer on said substrate;
- forming a materials stack on said first insulating layer;
- forming a first amorphous dielectric layer on said materials stack;
- selectively removing portions of said first amorphous dielectric layer to define a pattern for a magnetic bit;
- removing portions of said materials stack and said first insulating layer according to said pattern to define a magnetic bit having a bit edge profile and having a bit end located over said underlying component;
- forming a second amorphous dielectric layer over said first amorphous dielectric layer;
- removing portions of said second amorphous dielectric layer to expose said bit end with a remaining portion of said second amorphous dielectric layer protecting said bit edge profile;
- selectively forming a via in said insulating substrate at said bit end to expose a portion of said underlying component;
- forming a first conductive layer over said second amorphous dielectric layer, said first conductive layer contacting said bit end and extending into said via and contacting said component;
- and
- etching said first conductive layer to form said interconnection.
A process for forming a magnetoresistive memory device on a semiconductor substrate having an insulating layer formed thereover and an underlying integrated circuit component, and forming an interconnection between said device and said underlying component, comprising the steps of:
- forming a stack of a plurality of materials on said insulating layer, said stack including a first layer of a magnetic material and a second layer of a magnetic material, said first and second layers separated by a third layer of material;
- forming a first layer of an amorphous dielectric on said stack;
- selectively removing portions of said first layer of said amorphous dielectric to define a pattern for a magnetic bit;
- removing portions of said stack according to said pattern to define a magnetic bit having a bit edge profile and having a bit end located over said underlying component;
- forming a second layer of an amorphous dielectric over said first layer of amorphous dielectric;
- removing portions of said second layer of amorphous dielectric to expose said bit end with a remaining portion of said second layer of amorphous dielectric protecting said bit edge profile;
- selectively forming a via in said insulating layer at said bit end to expose a portion of said underlying component;
- forming a first conductive layer over said second layer of amorphous dielectric, said first conductive layer extending into said via and contacting said component;
- and
- etching said first conductive layer to form said interconnection.
A process for forming a magnetoresistive memory device on a semiconductor substrate having an insulating layer formed thereover and an underlying integrated circuit component, and forming an interconnection between said device and said underlying component, comprising the steps of:
- forming a diffusion barrier on said insulating layer;
- forming a stack of a plurality of materials on said insulating layer, said stack including a first layer of a magnetic material, and a second layer of a magnetic material, said first and second layers separated by a third layer of material;
- forming a first layer of bias sputter quartz on said stack;
- selectively removing portions of said first layer of bias sputter quartz to define a pattern for a magnetic bit;
- removing portions of said stack according to said pattern to define a magnetic bit having a bit edge profile and having a bit end located over said underlying component;
- forming a second layer of bias sputter quartz over said first layer of bias sputter quartz;
- performing ion milling to remove portions of said second layer of bias sputter quartz to expose said bit end with a remaining portion of said second layer of bias sputter quartz protecting said bit edge profile;
- selectively forming a via in said insulating layer at said bit end to expose a portion of said underlying component;
- forming a first metal layer over said second layer of bias sputter quartz, said first metal layer contacting said bit end and extending into said via and contacting said component;
- and
- etching said first metal layer to form a connection at said bit end.
Dependencies are inferred from the claim text.