Method of manufacturing thin film transistors in a liquid crystal display apparatus
AssigneeFujitsu Limited
InventorsYasuhiro Nasu, Teruhiko Ichimura, Tomotaka Matsumoto
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Abstract
A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal .portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.
Claims6
A method of manufacturing thin film transistors in a liquid crystal display apparatus, comprising the steps of:
- forming an opaque gate electrode and an opaque gate bus line connected to each other by an island-shaped transparent conductive film on a transparent insulating substrate;
- growing at least a gate insulator film and a semiconductor film on a region covering said gate electrode and said gate bus line;
- applying positive type photoresist onto said semiconductor film;
- exposing said positive type photoresist by radiating light from the side of said transparent insulating substrate using said gate electrode and said gate bus line as a mask by exposing from the back of said transparent insulating substrate;
- developing said positive type photoresist and leaving the photoresist on said gate electrode and said gate bus line being separated from each other;
- and
- leaving said semiconductor film on said gate electrode and said gate bus line, respectively, by etching said semiconductor film at a portion which is not covered by the pattern of said positive type photoresist.
A method of manufacturing thin film transistors in a liquid crystal display apparatus, comprising the steps of:
- forming an island-shaped transparent conductive film on a transparent insulating substrate;
- forming a gate electrode and a gate bus line connected to each other by said island-shaped conductive film on a transparent insulating substrate;
- growing a gate insulator film a semiconductor film and a channel protective film on a region covering said gate electrode and said gate bus line;
- forming a photoresist pattern onto said channel protective film;
- exposing said photoresist pattern by radiating light from the side of said transparent insulating substrate using said gate electrode and said gate bus line as a mask by exposing from the back of said transparent insulating substrate;
- developing said photoresist pattern so as to leave the photoresist pattern on said gate electrode and said gate bus line being separated from each other;
- leaving said channel protective film and said semiconductor film on said gate electrode and said gate bus line by etching said channel protective film and said semiconductor film at a portion which is not covered by said photoresist pattern;
- forming a pattern in which the contour of said channel protective film is positioned inside of the contour of said semiconductor film by applying side etching selectively to said channel protective film located between said photoresist pattern and said semiconductor film;
- forming a contact region by introducing impurities into said semiconductor active layer protruded outside from the contour of said channel protective film;
- and
- forming a source electrode and a drain electrode connected to said contact region and separated on said channel protective film by applying patterning to a conductive film.
Dependencies are inferred from the claim text.