Methods for producing diamond materials with enhanced heat conductivity

A method for forming a coating on a substrate to form a coated article, said coating consisting essentially of diamond, said diamond characterized by being substantially free of voids, having an average crystallite size greater than about 15 microns, said coating having a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25, comprising the steps of:

• preparing said substrate by abrasion with diamond particles;
• placing said substrate in a CVD reactor suitable for diamond deposition;
• depositing diamond in said CVD reactor during a first deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2 and 10 sccm CH.sub.4, at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of about 2.45 GHz to ignite and sustain a plasma in the region of said substrate, and maintaining said substrate at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer which is substantially continuous;
• depositing diamond in said CVD reactor during a second deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2, 4.6 sccm CO, and 9 sccm of CH.sub.4 at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of about 2.45 GHz to ignite and sustain a plasma in the region of said substrate, and maintaining said substrate at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer having a desired thickness;
• and
• removing said substrate from said CVD reactor.