Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films
AssigneesCeram Incorporated, Sharp Kabushiki Kaisha, Virginia Tech Intellectual Properties, Inc.
InventorsSeshu B. Desu, Wei Pan, Dilip P. Vijay
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Abstract
A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are etched in an etching gas of O.sub.2 mixed with either CClF.sub.2 or CHClFCF.sub.3.
Claims10
A method of reactive ion etching a material that includes at least one of RuO.sub.2 and lead zirconate titanate, comprising:
- placing the material into a chamber, the chamber containing CHClFCF.sub.3, and producing a glow discharge in the chamber to etch the material.
A method of patterning a semiconductor device that includes at least one of RuO.sub.2 and lead zirconate titanate, comprising:
- applying a mask over the material which covers a portion of the material and leaves exposed another portion of the material, placing the material with the applied mask into a chamber including CHClFCF.sub.3, and producing a glow discharge in the chamber to reactively ion etch the exposed portion of the material.
Dependencies are inferred from the claim text.