Thin film manufacturing method

In a method of forming a single-crystalline epitaxial thin film on a single-crystalline substrate by exposing said substrate in a chamber to an atmosphere comprising a source gas for forming said epitaxial thin film and heating to grow said epitaxial film, the improvement comprising:

• introducing the source gas to the chamber while the chamber is maintained at a first temperature to form an amorphous thin film on the substrate;
• increasing the temperature in the chamber to a second temperature greater than the first temperature to crystallize the amorphous film during its formation while increasing the temperature of the atmosphere to the second temperature;
• and
• maintaining the temperature in the chamber at the second temperature to grow said epitaxial thin film.

A method of manufacturing semiconductor device in which a crystallized thin film is formed on a substrate, which method comprises:

• forming an amorphous thin film on said substrate while maintaining said substrate in an atmosphere comprising a source gas for forming said thin film;
• forming a first crystallized thin film by crystallizing said amorphous thin film while said amorphous thin film is formed;
• and
• forming a second crystallized thin film on said first crystallized thin film subsequent to the formation of said first crystallized thin film.

A method of manufacturing a semiconductor device, which method comprises:

• forming an amorphous silicon thin film on a silicon substrate at a temperature in the range of about room temperature to approximately 540.degree. C. while maintaining said silicon substrate in an atmosphere comprising silane;
• forming a first silicon crystallized film by crystallizing said amorphous silicon thin film simultaneously with forming said amorphous silicon thin film;
• and
• forming a second silicon crystallized film on said first silicon crystallized film subsequent to the formation of said first silicon crystallized film.