US 5,494,891 AGranted

Method for manufacturing three-terminal oxide superconducting devices

AssigneeSumitomo Electric Industries, Ltd.

InventorsTakao Nakamura, Michitomo Iiyama

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Abstract

A superconducting device comprises a substrate, a non-superconducting layer formed in a principal surface of said substrate, an extremely thin superconducting channel formed of an oxide superconductor thin film on the non-superconducting layer. A superconducting source region and a superconducting drain region of a relatively thick thickness are formed of the oxide superconductor at the both sides of the superconducting channel separated from each other but electrically connected through the superconducting channel, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device further includes a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, in which the superconducting channel is connected to the superconducting source region and the superconducting drain region at the higher portions than their one third height portions.

Claims18

Dependent claims

A method for manufacturing a three-terminal superconducting device, comprising the steps of:

forming on a principal surface of a substrate a first oxide superconductor thin film;
selectively etching a center portion of the first oxide superconductor thin film so that the portion of the first oxide superconductor thin film is completely removed and a surface of the substrate is exposed so as to form a superconducting source region and a superconducting drain region separately on the substrate;
forming a non-superconductor layer having a thickness ranging from one third thickness to the same thickness of the superconducting source region and the superconducting region on the exposed surface of the substrate;
forming a second extremely thin oxide superconductor thin film on the non-superconductor layer so that an extremely thin superconducting channel which is connected to the superconducting source region and the superconducting drain region at the higher portions than their one third height portions is formed on the non-superconductor layer;
and
forming a gate insulating layer and a gate electrode stacked on the gate insulating layer on a portion of the second oxide superconductor thin film above the non-superconductor layer.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/354,048Filed 6 Dec 1994 · division
Priority: JP 3-34246730 Nov 1991
Granted: 27 Feb 1996
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10N 60/207
Having three or more electrodes, e.g. transistor-like structures: field effect devices
Y10S 505/701
High TC, above 30 k, superconducting device, article, or structured stock: coated or thin film device, i.e. active or passive
Y10S 505/728
Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device: etching
H10N
Electric solid-state devices not otherwise provided for