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US 5,494,861 AGranted
Method for heat-treating a compound semiconductor
AssigneeNew Japan Radio Co., Ltd.
InventorsShigeki Yamaga, Chikao Kimura
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Abstract
A method for heat-treating a compound semiconductor comprising a step of heat-treating a susceptor in a manner as to be disposed on a surface of the compound semiconductor with oposing each other, the susceptor comprising a compound of nitrogen and a group III element such as aluminum nitride.
Claims4
A method for heat-treating for activation of a compound semiconductor which is provided with an impurity-implanted region formed in a surface thereof, comprising steps of
- (a) disposing a susceptor in opposing relation to the impurity-implanted region in the surface of said compound semiconductor, wherein said susceptor comprises aluminum nitride, and
- (b) lamp anneal heat-treating said compound semiconductor to activate the impurity-implanted region.
Dependencies are inferred from the claim text.