Method of manufacturing semiconductor device
AssigneeNEC Corporation
InventorToru Yamazaki
Life of this patent
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Abstract
Oxygen ions are partially implanted into a semiconductor substrate 1 to form an oxygen ion implantation area. Then, a trench 2 surrounding the oxygen ion implantation area is formed in the semiconductor substrate 1 so as to remove the outer peripheral portion of the oxygen ion implantation area. Then, the semiconductor substrate 1 are heat treated to turn the oxygen ion implantation area into a buried oxide film 4 which is stable. Then, an insulating film 3 is buried into the trench 2.
Claims6
Method of manufacturing a semiconductor device in which a buried oxide film is formed within a semiconductor substrate and in which an insulating film is buried within a trench formed so as to contact the perimeter of the buried oxide film, comprising steps of:
- selectively implanting oxygen ions into a portion of said semiconductor substrate to form an oxygen ion implantation area adapted for forming said buried oxide film;
- forming said trench surrounding said oxygen ion implantation area in said semiconductor substrate so as to remove the side edge peripheral portion of said oxygen ion implantation area;
- heat treating said semiconductor substrate having said trench to turn said oxygen ion implantation area into said buried oxide film which is stable;
- and
- burying said insulating film into said trench.
Dependencies are inferred from the claim text.