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US 5,494,840 AGranted
Method for manufacturing DRAM memory cells having a thin metal oxide film on a thin metal film
OwnerTadahiro Ohmiinventor
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Abstract
A method for manufacturing memory cells of a DRAM, which are manufactured easily with a high yield, and have high breakdown voltages and large capacitance. In the method, after forming a metallic thin film comprising at least one layer on a substrate, the surface of the metallic thin film is directly oxidized, and a thin film of a metallic oxide is formed on the surface of the metallic thin film.
Claims8
A method for manufacturing memory cells of a DRAM, wherein said method comprises:
- a first process, in which a first region having an opposite conductive type from that of a substrate is formed, and a surface of said first region of said substrate, which surface is covered with an insulation film, is exposed,
- a second process, in which a metal film comprising at least one layer is formed,
- a third process, in which a metal oxide film is formed on a surface of said metal film by means of direct oxidation of said surface of said metal film which is conducted by means of supplying oxygen gas to a surface of said metal film, and by irradiating said surface with inert gas ions having a kinetic energy of 90 ev or below,
- a fourth process, in which a conductive film comprising at least one layer is formed, and
- a fifth process, in which wiring lines are formed after formation of an interlayer insulation film.
2 more elements
Dependencies are inferred from the claim text.