Method of forming semiconductor-on-insulator electronic devices by growing monocrystalline semiconducting regions from trench sidewalls

A method of forming a semiconductor-on-insulator electronic device in a semiconductor substrate, comprising the steps of:

• providing a semiconductor substrate of first conductivity type having a trench therein at a face, said trench having a sidewall extending between a bottom thereof and the face;
• forming a trench insulating layer on the trench bottom;
• growing a monocrystalline semiconducting region from the sidewall onto the trench insulating layer;
• simultaneously with said growing step, doping the semiconducting region with a dopant of second conductivity type;
• and
• forming an electronic device active region in the monocrystalline semiconducting region.

A method of forming a semiconductor electronic device in a semiconductor-on-insulator substrate, comprising the steps of:

• etching the substrate at a face thereof to define a first trench therein having a first bottom and a first sidewall;
• etching the substrate at the face to define a second trench therein having a second bottom and a second sidewall;
• forming a first trench insulating layer on the first bottom;
• forming a second trench insulating layer on the second bottom;
• forming a first monocrystalline semiconducting region from the first sidewall onto the first trench insulating layer;
• forming a second monocrystalline semiconducting region from the second sidewall onto the second trench insulating layer;
• forming a first active region of the electronic device in the first monocrystalline semiconducting region;
• and
• forming a second active region of the electronic device in the second monocrystalline semiconducting region,
• wherein the first trench and second trench define a monocrystalline mesa therebetween and further comprising the step of forming a third active region of the electronic device in the monocrystalline mesa.

A method of forming a semiconductor-on-insulator electronic device in a semiconductor substrate, comprising the steps of:

• providing a semiconductor substrate having a trench therein, said trench having a sidewall;
• forming a trench insulating layer on a bottom of the trench;
• growing a monocrystalline semiconducting region from the sidewall onto the trench insulating layer, using epitaxial lateral overgrowth;
• forming an active region of the electronic device in the monocrystalline semiconducting region,
• wherein said semiconductor substrate is of first conductivity type and wherein said growing step includes the step of simultaneously doping the semiconducting region with a dopant of second conductivity type.