Method for manufacturing a solar cell from a substrate wafer
AssigneeSiemens Aktiengesellschaft
InventorsVolker Lehmann, Josef Willer, Wolfgang Hoenlein
Life of this patent
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Abstract
Through-holes are formed in a substrate wafer by electrochemical etching, so that a perforated, self-supporting layer of n-doped, monocrystalline silicon arises. An n-doped region and a p-doped region that form a pn-junction and that both adjoin a first principal face of the self-supporting layer are produced in the self-supporting layer. A contact to the n-doped region and a contact to the p-doped region are formed on the first principal face, so that the pn-junction can be interconnected as solar cell into which the light incidence can occur via a second principal face lying opposite the first.
Claims17
A method for manufacturing a solar cell from a substrate wafer, comprising the steps of:
- forming through-holes in a substrate wafer of n-doped, monocrystalline silicon by electrochemical etching a first surface of said substrate wafer to produce a perforated, self-supporting layer of n-doped, monocrystalline silicon;
- producing at least one n-doped region and at least one p-doped region to form a pn-junction in said self-supporting layer, both of said regions adjoining a first principal face of said self-supporting layer, said first principal face being oriented parallel to said first surface,
- said step of producing said at least one p-doped layer including p.sup.+ -doping an entire surface of said first surface of said self-supporting layer to produce a p.sup.+ -doped region so that said pn-junction is formed, whereas said n-doped region comprises an inside of said self-supporting layer;
- producing a mask that covers an entire surface of said first surface of said self-supporting layer except a portion of said first surface in which said n-doped region is to adjoin said first principal face;
- uncovering said first surface of said n-doped region by etching off said p.sup.+ -doped surface not covered by said mask;
- forming a contact to said at least one n-doped region and a contact to said at least one p-doped region on said first principal face for operating said pn-junction as a solar cell into which light is incident via a second principal face lying opposite to said first principal face, including
- providing a respective contact for a p.sup.+ -doped region and said uncovered n-doped region at said first principal face after removal of said mask.
Dependencies are inferred from the claim text.