Vertical heat treatment device for semiconductor
AssigneeToshiba Ceramics Co., Ltd.
InventorsTakeshi Inaba, Eiichi Toya, Takashi Tanaka, Yasumi Sasaki
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Abstract
End members are located at the top and the bottom of a vertical heat treatment device. A plurality of support members are vertically mounted on the end members. A plurality of wafer hold members are fixed on the support members in a parallel manner, each of which is formed in an approximately circular arc shape. The wafer hold member is made of SiC by a CVD method or Si3N4 by a CVD method. The wafer hold member has a plate portion on which a wafer is to be placed and a reinforce portion connected to the plate portion. The plate portion is 100-1000 microns in thickness.
Claims16
A vertical heat treatment device for semiconductors, comprising:
- a plurality of wafer hold members for holding semiconductor wafers;
- and
- means for supporting the wafer hold members at intervals;
- each of the wafer hold members having an enclosure formed therein in which a cavity is formed, wherein the cavity is formed by removing a carbon body from one of a SiC and Si3N4 coating enclosing the carbon body.
A vertical heat treatment device for semiconductors, comprising:
- a plurality of support members;
- and
- a plurality of wafer hold members supported by the support members, each of the wafer hold members having an enclosure formed therein, wherein the enclosure has a passage opening at a bottom portion of said each of the wafer hold members.
The vertical heat treatment device wherein said each of the wafer hold members includes a longitudinal passage opening formed in an underside thereof.
Dependencies are inferred from the claim text.