Multilayer positive temperature coefficient thermistor device

Abstract

A plurality of semiconductor substrates having positive resistance-temperature coefficients are bonded to each other through a glass layer to be stacked. First and second terminal electrodes are formed on end surfaces of such a stacked structure respectively. First and second ohmic electrodes are formed on respective major surfaces of each semiconductor substrate, and the first and second ohmic electrodes are connected to the first and second terminal electrodes respectively. The ohmic electrodes contain a metal, other than silver, exhibiting an ohmic property, such as zinc, aluminum, nickel or chromium, for example. The terminal electrodes also contain a metal, other than silver, exhibiting an ohmic property. The terminal electrodes may be provided on surfaces thereof with layers which are made of a metal having excellent solderability.

Dependencies are inferred from the claim text.