Integrated circuit for sensing an environmental condition and producing a high power circuit

Abstract

An environmental sensor integrated with high current drive device is provided. An environmental sensor is fabricated on a semiconductor substrate using conventional MOS process used for N-well CMOS logic and DMOS power transistors. An N-well is preferably used as a junction etch stop for micromachining of mechanical sensor components. A high voltage P-type region is used to electrically isolate the high current device from the sensor device. By locating the sensor device away from the high current drive device on a common semiconductor substrate, good performance can be achieved from the sensor even while the high current device dissipates a large amount of power.

Dependencies are inferred from the claim text.