Test analysis apparatus and analysis method for semiconductor wafer using OBIC analysis

A semiconductor wafer test analysis apparatus for testing a semiconductor wafer including a plurality of circuits, metallic wiring, and electrode pads on a front surface of thr semiconductor wafer, said semiconductor wafer test analysis apparatus comprising:

• pulse signal supplying means for supplying a test pulse signal for test analysis of a semiconductor wafer while the semiconductor wafer is actuated and for supplying a pulse signal for luminous analysis to respective electrode pads on a front surface of the semiconductor wafer, said test pulse signal supplying means including:
• a probe card movable along X, Y, and Z axes and including a plurality of metallic needles for connecting the test pulse signal and the luminous analysis pulse signal to respective electrode pads on the front surface of the semiconductor wafer and for receiving current generated in the semiconductor wafer,
• a positioning optical microscope for positioning each respective metallic needleof said probe card and a corresponding electrode pad of the semiconductor wafer, and
• a ring-like test head having a central through hole for receiving said positioning optical microscope, said test head generating and supplying the test pulse signal and the luminous analysis pulse signal tosaid probe card;
• and
• light irradiating and detecting means for irradiating a rear surface of the semiconductor wafer with light, for detecting light reflected from the rear surface and light generated in the semiconductor wafer in response to the test pulse signal and the pulse signal for luminous analysis at the rear surface of the semiconductor wafer for inspecting and analyzing a defective portion of the semiconductor wafer.

A semiconductor wafer test analysis apparatus for testing a semiconductor wafer including a plurality of circuits, metallic wiring, and electrode pads on a front surface of the semiconductor wafer, said semiconductor wafer test analysis apparatus comprising:

• pulse signal supplying and current detecting means located at a front surface of a semiconductor wafer, said pulse signal supplying and current detectting means including
• a probe card movable along X, Y, and Z axes and including a plurality of metallic needles for connecting a test pulse signal and a luminous analysis pulse signal to electrode pads on the front surface of the semiconductor wafer and for receiving current generated in semiconductor wafer,
• a positioning optical microscope for positioning each respective metallic needle of said probe card and a corresponding electrode pad of the semiconductor wafer, and
• a ring-like test head having a central through hole for receiving said positioning optical microscope, said test head generating and supplying the test pulse signal and the pulse signal for luminous to said probe card and receiving current generated in the semiconductor wafer from said probe card;
• and
• light irradiating and detecting means located at a rear surface of the semiconductor wafer, said pulse signal supplying and current detecting means supplying the test signal and the luminous analysis pulse signal for test analysis to respective electrode pads on the front surface of the semiconductor wafer while the semiconductor wafer is actuated and detecting a current generated in the semiconductor wafer in response to light irradiation by said light irradiating and detecting means, said light irradiating and detecting means irradiating the rear surface of the semiconductor wafer with light, detecting light reflected from the rear surface of the semiconductor wafer, irradiating the rear surface with a laser beam for optical beam induced current analysis, and detecting light generated in the semiconductor wafer in response to the luminous analysis pulse signal.