Transistor device with increased breakdown voltage

A lateral bipolar device comprising:

• a substrate with a first region having a first conductivity type forming a base;
• a second region of said substrate laterally adjacent said base, having a second conductivity type different from said first conductivity type forming a collector;
• a third region of said substrate laterally adjacent said base, having said second conductivity type, forming an emitter;
• a first polysilicon region formed on the surface of said substrate contacting said collector, said first polysilicon region being doped to said second conductivity type;
• a second polysilicon region formed on the surface of said substrate contacting said emitter, said second polysilicon region being doped to said second conductivity type;
• metal silicide contacting upper surfaces of said first and second polysilicon regions;
• and
• a third polysilicon region formed on the surface of said substrate contacting said base, said third polysilicon region being substantially free from metal silicide;
• wherein said third polysilicon region is laterally spaced apart from said first polysilicon region and said second polysilicon region;
• and wherein said third polysilicon region is doped to said first conductivity type, wherein the base includes a fourth region having said first conductivity type directly below said third polysilicon region, and wherein said second, third, and fourth regions are formed at least in part by out-diffusion of dopants from the respective first, second, and third polysilicon regions caused by forming said metal silicide in contact with said upper surfaces of said first and second polysilicon regions.

A lateral bipolar device comprising:

• a substrate with a first region having a first conductivity type forming a base;
• a second region of said substrate laterally adjacent said base, having a second conductivity type different from said first conductivity type, forming a collector;
• a third region of said substrate laterally adjacent said base, having said second conductivity type, forming an emitter;
• a first polysilicon region formed on the surface of said substrate contacting said collector, said first polysilicon region being doped to said second conductivity type;
• a second polysilicon region formed on the surface of said substrate contacting said emitter, said second polysilicon region being doped to said second conductivity type;
• metal silicide contacting upper surfaces of said first and second polysilicon regions;
• and
• a third polysilicon region formed on the surface of said substrate contacting said base, said third polysilicon region being substantially free from metal silicide;
• wherein said third polysilicon region is laterally spaced apart from said first polysilicon region and said second polysilicon region;
• and wherein said third polysilicon region is doped with a dopant of said first conductivity type and wherein said device has a BV.sub.ceo of at least about 8V.