Method and equipment for manufacturing a semiconductor device

Abstract

An object of the present invention is to realize a method of and equipment for manufacturing a semiconductor device which can improve the flatness of an interlayer insulating film and increase the reliability of the metal wiring of a second layer to be formed in a succeeding process. The method of manufacturing the semiconductor device of the present invention is characterized by a manufacturing process to be successively implemented comprising: a step for forming an insulating film by means of a chemical vapor deposition method on a semiconductor substrate having an electrode patterned thereon; a step for selectively removing the insulating film by using a reactive ion etching method and forming a side wall made of the insulating film on the patterned electrode; and a step for forming the insulating film by means of the chemical vapor deposition method while introducing excited halogen molecules at an excited molecule oscillation level.

Dependencies are inferred from the claim text.