Method for forming conductive bumps on a semiconductor device

A method for forming conductive bumps on a semiconductor die, the method comprising the steps of:

• providing a semiconductor substrate having a metallization layer and an insulating layer, wherein the insulating layer is patterned to create a pattern of exposed portions of the metallization layer;
• depositing an imageable conductive material on the insulating layer and in contact with the exposed portions of the metallization layer;
• exposing selected portions of the imageable conductive material to actinic radiation, thereby chemically altering the selected portions of the imageable conductive material;
• and
• developing the imageable conductive material to dissolve portions of the imageable conductive material, leaving a pattern of the imageable conductive material corresponding to the pattern of exposed portions of the metallization layer.

A method for forming conductive bumps on a semiconductor device, comprising the steps of:

• providing a semiconductor die having input and output terminal sites;
• depositing an imageable material comprised of a resin filled with metallic particles such that the imageable material is in contact with the input and output terminal sites;
• providing a mask having a pattern correlating to the input and output terminal sites;
• transmitting actinic radiation through the mask to selectively alter portions of the imageable material;
• and
• selectively removing first portions of the imageable material such that second portions of the imageable material remain and are in electrical contact with the input and output terminal sites.