Process for applying structured layers using laser transfer
AssigneeDeutsche Forschungsanstalt fuer Luft- und Raumfahrt e.V.
InventorHans Opower
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Abstract
In order to provide a process for applying structured layers of a functional structure of a semiconductor component, with which structured layers of a functional structure of a semiconductor component can be produced as simply as possible and with as little susceptibility as possible with respect to the quality of the semiconductor components, it is suggested that a material film be arranged above a surface region of a process substrate to be provided with the structured layer, that the material film be acted upon on its side remote from the process substrate by a focus of a laser beam located in a defined position corresponding to the structured layer to be produced and that with the laser beam in the region of the focus the material from the material film migrate to the surface region.
Claims44
A process for applying structured layers of a functional structure of a semiconductor component, comprising the steps of:
- arranging a material film above a surface region of a process substrate to be provided with the structured layer;
- acting upon the material film on its side remote from the process substrate by a focus of a laser beam located in a defined position corresponding to the structured layer to be produced;
- heating the material in the material film with the laser beam in the region of the focus so that material from the material film migrates from the focus region to the surface region;
- and
- producing the structured layer by overlapping application of material from the focus region of the material film to the process substrate.
A process for applying structured layers of a functional structure of a semiconductor component, comprising the steps of:
- arranging a material film above a surface region of a process substrate to be provided with the structured layer;
- generating a laser pulse having a duration of between about 1 and 100 picoseconds, a focus of said laser pulse, located in a defined position corresponding to the structured layer to be produced, acting upon the material film on its side remote from the process substrate;
- and
- heating the material in the material film with the laser pulse in the region of the focus with a light density greater than 10.sup.8 w/cm.sup.2 so that material from the material film migrates from the focus region to the surface region;
- wherein the structured layer is produced on the process substrate by overlapping application of material from the focus region of the material film.
A process for applying structured layers of a functional structure of a semiconductor component, comprising the steps of:
- arranging a material film above a surface region of a process substrate to be provided with the structured layer;
- generating a laser pulse having a duration of between about 1 and 100 picoseconds, a focus of said laser pulse, located in a defined position corresponding to the structured layer to be produced, acting upon the material film on its side remote from the process substrate;
- and
- heating the material in the material film with the laser pulse in the region of the focus with a light density greater than 10.sup.8 w/cm.sup.2 so that material from the material film migrates from the focus region to the surface region;
- wherein the laser beam consists of a plurality of laser pulses following one another in a timed sequence and the focus regions of successive laser pulses are positioned on the material film so as not to overlap.
A process for applying structured layers of a functional structure of a semiconductor component, comprising the steps of:
- arranging a material film above a surface region of a process substrate to be provided with the structured layer;
- generating a laser pulse having a duration of between about 1 and 100 picoseconds, a focus of said laser pulse, located in a defined position corresponding to the structured layer to be produced, acting upon the material film on its side remote from the process substrate;
- and
- heating the material in the material film with with the laser pulse in the region of the focus with a light density greater than 10.sup.8 w/cm.sup.2 so that material from the material film migrates from the focus region to the surface region;
- wherein the material film is arranged on a transparent carrier permeable to the laser beam, an optical focusing means for the laser beam is arranged on a side of the transparent carrier remote from the material film, and the optical focusing means is coupled to the transparent carrier by means of an immersion fluid.
A process for applying structured layers of a functional structure of a semiconductor component, comprising the steps of:
- arranging a material film above a surface region of a process substrate to be provided with the structured layer;
- generating a laser pulse having a duration of between about 1 and 100 picoseconds, a focus of said laser pulse, located in a defined position corresponding to the structured layer to be produced, acting upon the material film on its side remote from the process substrate;
- and
- heating the material in the material film with the laser pulse in the region of the focus with a light density greater than 10.sup.8 w/cm.sup.2 so that material from the material film migrates from the focus region to the surface region;
- wherein the material film is arranged on a transparent carrier permeable to the laser beam, an optical focusing means for the laser beam is arranged on a side of the transparent carrier remote from the material film, and the optical focusing means is arranged to focus the laser pulse on the carrier in a reflection-free manner.
A process for applying structured layers of a functional structure of a semiconductor component, comprising the steps of:
- arranging a material film above a surface region of a process substrate to be provided with the structured layer;
- acting upon the material film on its side remote from the process substrate by a focus of a laser beam, said laser beam consisting of a plurality of successive laser pulses following one another in timed sequence;
- locating the focus regions of said successive laser pulses on the material film so as not to overlap;
- and
- heating the material in the material film with the laser beam in the focus regions so that material from the material film migrates from the focus regions to the surface region.
A process for applying structured layers of a functional structure of a semiconductor component, comprising the steps of:
- arranging a material film on a carrier transparent to the laser beam and above a surface region of a process substrate to be provided with the structured layer;
- arranging an optical focusing means for a laser beam on a side of the transparent carrier remote from the material film, said optical focusing means and said transparent carrier being coupled by means of an immersion fluid;
- acting upon the material film on its side remote from the process substrate by a focus of said laser beam located in a defined position corresponding to the structured layer to be produced;
- and
- heating the material in the material film with the laser beam in the region of the focus so that material from the material film migrates from the focus region to the surface region.
A process for applying structured layers of a functional structure of a semiconductor component, comprising the steps of:
- arranging a material film on a carrier transparent to the laser beam and above a surface region of a process substrate to be provided with the structured layer;
- arranging an optical focusing means for a laser beam on a side of the transparent carrier remote from the material film, said optical focusing means being arranged to focus the laser beam on the carrier in a reflection-free manner;
- acting upon the material film on its side remote from the process substrate by a focus of said laser beam located in a defined position corresponding to the structured layer to be produced;
- and
- heating the material in the material film with the laser beam in the region of the focus so that material from the material film thereby migrates from the focus region to the surface region.
Dependencies are inferred from the claim text.