Method for growing compound semiconductor layers

A method of growing a layer of a Group III-V compound semiconductor on a silicon substrate comprising:

• an oxide layer removing step of removing an oxide layer on a surface of the silicon substrate at a first temperature;
• a low-temperature grown layer forming step of forming a low-temperature grown layer of the Group III-V compound semiconductor on the silicon substrate while introducing a source gas for Group III and a source gas for Group V at a second temperature lower than the first temperature;
• a first single crystal layer growing step of growing a first single crystal layer of the Group III-V compound semiconductor on the low-temperature grown layer while introducing the source gas for Group III and the source gas for Group V at a third temperature higher than the second temperature and lower than the first temperature;
• a second single crystal layer growing step of growing a second single crystal layer of the Group III-V compound semiconductor on the first single crystal layer while introducing the source gas for Group III and the source gas for Group V at a fourth temperature higher than the third temperature and lower than the first temperature;
• and
• a third single crystal layer growing step of growing a third single crystal layer of the Group III-V compound semiconductor on the second single crystal layer while introducing the source gas for Group III and the source gas for Group V at a fifth temperature higher than the second temperature and lower than the fourth temperature.

A method of growing a layer of a Group III-V compound semiconductor on a silicon substrate comprising:

• an oxide layer removing step of removing an oxide layer on a surface of the silicon substrate at a first temperature;
• a low-temperature grown layer forming step of forming a low-temperature grown layer of the III-V compound semiconductor on the silicon substrate while lowering the first temperature to a second lower temperature of below 400.degree. C., then starting an introduction of a source gas for Group V, and subsequently starting additionally an introduction of a source gas for Group III;
• and
• a single crystal layer growing step of growing a single crystal layer of the Group III-V compound semiconductor on the low-temperature grown layer at a third temperature higher than the second temperature and lower than the first temperature while introducing the source gas for Group III and the source gas for Group V.