Method for producing semiconductor device substrate by bonding a porous layer and an amorphous layer

A process for producing a semiconductor device substrate, comprising the steps of making a first substrate member porous, forming an amorphous layer on a second substrate member, bonding the porous first substrate member to the amorphous layer at a temperature of an atmosphere in which the amorphous layer at least does not crystallize, causing solid-phase epitaxial growth of the amorphous layer by utilizing the porous first substrate member as crystal growth seed, and removing the bonded first substrate member after completion of the epitaxial growth by chemical etching.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first substrate member composed of Si, forming an insulating layer on a second substrate member, forming amorphous Si on the insulating layer, bonding the surface of the amorphous Si to the surface of the porous surface layer at a temperature in which the amorphous Si at least does not crystallize, causing solid-phase spitaxial growth of the amorphous Si by utilizing the porous first substrate member as crystal growth seed, removing the first substrate member by grinding or polishing to an extent that the porous portion is just unexposed or a part thereof is exposed, removing the remaining portion of the first substrate member except the porous portion by selective etching as a first-removal step, and removing the porous portion by selective chemical etching as a second removal step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first substrate member composed of Si, forming amorphous Si on a second substrate member, bonding the surface of the amorphous Si to the surface of the porous surface layer at a temperature in which the amorphous Si at least does not crystallize, causing solid-phase epitaxial growth of the amorphous Si by utilizing the porous first substrate member as crystal growth seed, removing the first substrate member by grinding or polishing to an extent that the porous portion is just unexposed or a part thereof is exposed, removing the remaining first substrate member except the porous portion by selective etching as a first removal step, and removing the porous portion by selective chemical etching as a second removal step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first substrate member composed of Si, forming an insulating layer on a second substrate member, forming amorphous Si on the insulating layer, bonding the surface of the amorphous Si to the surface of the porous surface layer at a temperature in which the amorphous layer at least does not crystallize, causing solid-phase epitaxial growth of the amorphous Si by utilizing the porous first substrate member as crystal growth seed, removing the remaining first substrate member except the porous portion by selective etching as a first removal step, and removing the porous portion by selective chemical etching as a second removal step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first substrate member composed of Si, forming amorphous Si on a second substrate member, bonding the surface of the amorphous Si to the surface of the porous surface layer at a temperature in which the amorphous layer at least does not crystallize, causing solid-phase epitaxial growth of the amorphous Si by utilizing the porous first substrate member as crystal growth seed, removing the first substrate member except the porous portion by selective etching as a first removal step, and removing the porous portion by selective chemical etching as a second removal step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first substrate member, forming an amorphous layer on a second substrate member composed of a material different from the first substrate member, bonding the surface of the amorphous layer to the surface of the porous layer at a temperature in which the amorphous layer does not crystallize, thinning the first substrate member by removing a part thereof, causing solid-phase epitaxial growth of the amorphous layer by utilizing the porous layer as crystal growth seed, removing the rest of the first substrate member selectively as a first removal step, and selectively removing only the remaining porous layer of the bonded substrate members as a second removal step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first substrate member composed of Si, oxidizing a part of pores in the Si layer made porous, forming amorphous Si on a second substrate member composed of a material different from Si, bonding the surface of the amorphous Si to the surface of the porous Si at a temperature in which the amorphous Si does not crystallize, removing the first substrate member composed of Si by grinding or polishing to an extent that the porous Si layer is just unexposed or a part thereof is exposed, causing solid-phase epitaxial growth of the amorphous Si by utilizing the porous Si as crystal growth seed, removing the rest of the first Si substrate member by selective etching as a first etching step, and removing only the remaining porous Si of the bonded substrate members after the grinding and the etching by selective chemical etching as a second etching step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first Si substrate member composed of Si, oxidizing a part of pores in the Si layer made porous, forming an insulating layer on a second substrate member composed of a material different from Si, forming amorphous Si on the insulating layer, bonding the surface of the amorphous Si to the surface of the porous Si at a temperature in which the amorphous Si does not crystallize, removing the first Si substrate member by grinding or polishing to an extent that the porous Si layer is just unexposed or a part thereof is exposed, causing solid-phase epitaxial growth of the amorphous Si by utilizing the porous Si as crystal growth seed, removing the rest of the first substrate member composed of Si by selective etching as a first etching step, and removing the remaining porous Si only of the bonded substrate members after the grinding and the etching by selective chemical etching as a second etching step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first substrate member composed of Si, oxidizing a part of pores in the Si layer made porous, forming amorphous Si on a second substrate member composed of a material different from Si, bonding the surface of the amorphous Si to the surface of the porous Si at a temperature in which the amorphous Si does not crystallize, removing the first Si substrate member by grinding or polishing to an extent that the porous Si layer is just unexposed or a part thereof is exposed, removing the rest of the first Si substrate member by selective etching as a first etching step, causing solid-phase epitaxial growth of the amorphous Si by utilizing the porous Si as crystal growth seed, and removing only the porous Si of the bonded substrates after the grinding and the etching by selective chemical etching as a second etching step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first Si substrate member composed of Si, oxidizing a part of pores in the Si layer made porous, forming an insulating layer on a second substrate member composed of a material different from Si, forming amorphous Si on the insulating layer, bonding the surface of the amorphous Si to the surface of the porous Si at a temperature in which the amorphous Si does not crystallize, removing the first Si substrate member by grinding or polishing to an extent that the porous Si layer is just unexposed or a part thereof is exposed, removing the rest of the first Si substrate member by selective etching as a first etching step, causing solid-phase epitaxial growth of the amorphous Si by utilizing the porous Si as crystal growth seed, and removing only the remaining porous Si of the bonded substrate members after the grinding and the etching by selective chemical etching as a second etching step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first Si substrate member composed of Si, oxidizing a part of pores in the Si layer made porous, forming amorphous Si on a second substrate member composed of a material different from Si, bonding the surface of the amorphous Si to the surface of the porous Si at a temperature in which the amorphous Si does not crystallize, causing solid-phase epitaxial growth of the amorphous Si by utilizing the porous Si as crystal growth seed, removing the first Si substrate member by selective etching as a first etching step, and removing the porous Si only of the bonded and etched substrate members by selective chemical etching as a second etching step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first Si substrate member composed of Si, oxidizing a part of pores in the Si layer made porous, forming an insulating layer on a second substrate member composed of a material different from Si, forming amorphous Si on the insulating layer, bonding the surface of the amorphous Si to the surface of the porous Si at a temperature in which the amorphous Si does not crystallize, causing solid-phase epitaxial growth of the amorphous Si by utilizing the porous Si as crystal growth seed, removing the first Si substrate member by selective etching as a first etching step, and removing only the remaining porous Si of the bonded and etched substrate members by selective chemical etching as a second etching step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first Si substrate member composed of Si, oxidizing a part of pores in the Si layer made porous, forming amorphous Si on a second substrate member composed of a material different from Si, bonding the surface of the amorphous Si to the surface of the porous Si at a temperature in which the amorphous Si does not crystallize, removing the first Si substrate member by selective etching as a first etching step, causing solid-phase epitaxial growth of the amorphous Si by utilizing the porous Si as crystal growth seed, and removing only the porous Si of the bonded and etched substrate members by selective chemical etching as a second etching step.

A process for producing a semiconductor device substrate, comprising the steps of making porous a surface layer of at least one side of a first Si substrate member composed of Si, oxidizing a part of pores in the Si layer made porous, forming an insulating layer on a second substrate member composed of a material different from Si, forming amorphous Si on the insulating layer, bonding the surface of the amorphous Si to the surface of the porous Si at a temperature in which the amorphous Si does not crystallize, removing the first Si substrate member by selective etching as a first etching step, causing solid-phase epitaxial growth of the amorphous Si by utilizing the porous Si as crystal growth seed, and removing only the remaining porous Si of the bonded and etched substrate members by selective chemical as a second etching step.