Back to results
US 5,492,854 AGranted
Method of manufacturing semiconductor device
AssigneeNEC Corporation
InventorKoichi Ando
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes the step of forming a capacitor. The step includes the step of forming a lower electrode constituted by a polysilicon film which selectively covers a surface of a predetermined insulating film on a semiconductor substrate, and the step of performing heating in an atmosphere containing an SiH.sub.4 gas and removal of a native oxide film on a surface of the lower electrode, and then performing formation of a silicon nitride film without being exposed to an oxygen atmosphere.
Claims10
A method of manufacturing a semiconductor device, which comprises the steps of:
- forming a capacitor including forming a lower electrode constituted by a polysilicon film which selectively covers a surface of an insulating film on a semiconductor silicon substrate, heating in an atmosphere containing a SiH.sub.4 gas and removing a native oxide film on a surface of the lower electrode, and then forming a silicon nitride film without exposure to an oxygen atmosphere.
Dependencies are inferred from the claim text.