Fluorine doped silicon oxide process
AssigneeAir Products and Chemicals, Inc.
InventorsRavi K. Laxman, Arthur K. Hochberg, David A. Roberts, Raymond N. Vrtis
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AssigneeAir Products and Chemicals, Inc.
InventorsRavi K. Laxman, Arthur K. Hochberg, David A. Roberts, Raymond N. Vrtis
Estimating the term…
The present invention is a process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR1## wherein at least one of R.sup.1 -R.sup.6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl, aryl or benzylic groups, or C.sub.x H.sub.2x when one or more of R.sup.1, R.sup.2 or R.sup.3 is connected to R.sup.4, R.sup.5 or R.sup.6 through a bridging group C.sub.y H.sub.2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6 and R.sup.7 is independently H, F, C.sub.z H.sub.2z+1 where z is 1-6 or C.sub.r H.sub.s F.sub.t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1) . The present invention is also the film formed by that process and several novel source materials used in the process.
A process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula:
A fluorine-containing silicon oxide film supported on a substrate comprising SiO.sub.p F.sub.q, wherein p=2-q and q=0.03-0.6, produced by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula:
The composition of matter comprising F.sub.2 Si(CH.sub.3)CH.sub.2 CH.sub.2 Si(CH.sub.3)F.sub.2.
The composition of matter comprising F.sub.3 SiCH.sub.2 CH.sub.2 CH.sub.2 CH(SiF.sub.3)C.sub.2 H.sub.5.
A process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source, comprising the steps of:
Dependencies are inferred from the claim text.