US 5,492,734 A · Method of forming deposition film

Abstract

This invention provides a method of forming a deposition film serving as a high-quality wiring layer having good stress migration durability against any material such as a non-monocrystalline material. A substrate is located in a deposition film formation space, a gas of an alkylaluminum halide is supplied to the deposition film formation space, and an aluminum film is selectively formed on an electron donor surface at a partial pressure of the alkylaluminum halide of 7.times.10.sup.-3 Torr to 9.times.10.sup.-2 Torr in the range of a decomposition temperature or more of the alkylaluminum halide and 450.degree. C. or less. When deposition is to be performed on the non-monocrystalline material, a chemical treatment for terminating with hydrogen atoms a non-electron donor surface of a substrate having the electron donor surface and the non-electron donor surface is performed, and the deposition film is deposited by a non-selective deposition method.

Claims4

Dependent claims

A method of forming a deposition film, comprising steps of:

locating a substrate in a deposition film formation space of a CVD apparatus capable of generating a plasma, said substrate having an electron donor surface consisting of a non-monocrystalline material and a non-electron donor surface;
supplying a gas of an alkylaluminum hydride to said deposition film formation space;
selectively forming a metal film consisting essentially of aluminum on said electron donor surface while said electron donor surface is kept at a temperature ranging from less than a decomposition temperature of the alkylaluminum hydride to 450.degree. C.;
generating the plasma in said CVD apparatus while the gas of the alkylaluminum hydride is supplied, and forming said metal film consisting essentially of aluminum and a metal film containing aluminum as a major constituent on said non-electron donor surface,
wherein the plasma having a plasma area having an electron density of the plasma falling within a range of 5.times.10.sup.8 to 8.times.10.sup.10 cm.sup.-3 near a surface of said substrate is generated to form said metal film.

2 more elements

Dependencies are inferred from the claim text.

Method of forming deposition film

Life of this patent

Method of forming deposition film

Life of this patent

Abstract

Claims4