Polycrystalline silicon photovoltaic device
AssigneeSanyo Electric Co., Ltd.
InventorKeiichi Sano
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Abstract
A polycrystalline silicon film is prepared by forming an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of TA peak intensity to TO peak intensity in a Raman spectrum, and then heat treating the amorphous silicon film for converting the same to a polycrystalline silicon film. The polycrystalline silicon film has improved characteristics as a photoelectric conversion layer in a photovoltaic device.
Claims17
A photovoltaic device comprising a polycrystalline silicon film as a photoelectric conversion layer, said polycrystalline silicon film having been formed by providing an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of a TA peak intensity relative to a TO peak intensity in a Raman spectrum, and heat treating said amorphous silicon film for converting said amorphous silicon film to said polycrystalline silicon film.
A polycrystalline silicon film useful as a photoelectric conversion layer in a photovoltaic device, said polycrystalline silicon film having been formed by providing on a substrate an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of a TA peak intensity relative to a TO peak intensity in a Raman spectrum, and heat treating said amorphous silicon film for converting said amorphous silicon film to said polycrystalline silicon film.
A photovoltaic device comprising a polycrystalline silicon film as a photoelectric conversion layer, wherein said polycrystalline silicon film has a mean grain size of at least about 1.3 .mu.m and a carrier mobility of at least about 10.sup.2.75 cm.sup.2 /V.S.
Dependencies are inferred from the claim text.