Loading patent…
OwnerHong Lin, Long Yang +2inventors
InventorsHong Lin, Long Yang, Michael R. T. Tan, Shih-Yuan Wang
Estimating the term…
The present invention provides a structure and method for integrating a photodiode and surface emitting laser on a substrate which minimizes both process complexity and exposure of epitaxial layers. In a first embodiment, a photodiode structure is integrated with the surface emitting laser simply by adding a separate Schottky contact to the surface of the SEL. In a second embodiment, a photodiode structure is integrated with the surface emitting laser by positioning a current isolation region between the photodiode and the SEL. The current isolation region should extend into a first mirror region but not into the light generation region of the active region so that the light generation region of the SEL is optically coupled to the light absorption region of the photodiode.
An integrated light emitting device and photodetecting device comprising:
A method of forming an integrated light emitting device and photodetecting device comprising the steps of:
Dependencies are inferred from the claim text.