Column decoder for virtual ground memory array
AssigneeTexas Instruments Incorporated
InventorsJohn F. Schreck, Phat C. Truong
Life of this patent
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Abstract
A virtual ground memory includes an array of rows and columns of memory cells and a plurality of alternating first and second column lines. The cells in each column are coupled to a first column line and a second column line. A first decoder selects a plurality of first column lines in response to first decoded address signals and selects one of the selected plurality of first column lines in response to second decoded address signals.
Claims12
A memory device, comprising:
- an array of rows and columns of memory cells;
- a plurality of alternating first and second column lines, a column of cells coupled between each pair of adjacent column lines, the cells in each column being coupled to a first column line and a second column line;
- a first decoder for selecting a plurality of first column lines in response to first decoded address signals and selecting one of said selected plurality of first column lines in response to second decoded address signals.
A method for programming a memory device having an array of rows and columns of memory cells, a plurality of alternating first and second column lines, with a column of cells between each pair of adjacent column lines and with the cells in each column being coupled to a first column line and a second column line, comprising the steps of:
- selecting a plurality of first column lines in response to first decoded address signals;
- and
- selecting one of said selected plurality of first column lines in response to second decoded address signals.
Dependencies are inferred from the claim text.