Apparatus for evaluating characteristics of semiconductor device and method of evaluating characteristics of semiconductor device using the same
AssigneeKabushiki Kaisha Toshiba
InventorsToru Watanabe, Yuri Yonekura, Katsuya Okumura
Life of this patent
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Abstract
A probe is attached to a support plate vertically to the surface of the support plate. A drop of a molten metal is formed at a tip portion of the probe. The support plate has a heater for setting the temperature of the probe and the drop of the molten metal at the tip portion of the probe. The probe is situated at a position corresponding to a position of an electrode of an LSI. The probe is connected to a measuring device for evaluating characteristics of the LSI by wiring. The drop of the molten metal connects the probe and the electrode of the LSI electrically.
Claims17
An apparatus for evaluating characteristics of a semiconductor device, said apparatus comprising:
- a support plate;
- a needle-like probe having a first end and a second end, said second end being supported by said support plate, said first end having a tip portion situated at a position corresponding to a position of an electrode of said semiconductor device to be measured, said probe being connected to a measuring device for evaluating the characteristics of the semiconductor device;
- a heater for setting the temperature of said first end of said probe;
- and
- a molten metal held by said first end of said probe.
A method of evaluating characteristics of a semiconductor device by utilizing a needle-like probe having a first and a second end, comprising the steps of:
- electrically connecting said second end of said probe to a measuring device;
- forming a drop of a molten metal at a tip portion of said first end of said probe situated at a position corresponding to a position of an electrode of the semiconductor device to be measured, said drop of the molten metal being formed by immersing said tip portion of said probe in the molten metal and then pulling up said probe;
- bringing said drop of the molten metal into contact with said electrode of the semiconductor device, and electrically connecting said semiconductor device and said probe;
- and
- applying an electric signal to the semiconductor device and evaluating the characteristics of the semiconductor device.
A method of evaluating characteristics of first and second semiconductor devices by utilizing a needle-like probe having a first and second end, comprising the steps of:
- electrically connecting said second end of said probe to a measuring device;
- forming a drop of a molten metal at a tip portion of said first end of said probe situated at a position corresponding to a position of an electrode of the first semiconductor device to be measured;
- bringing said drop of the molten metal into contact with said electrode of the first semiconductor device, and electrically connecting said first semiconductor device and said probe;
- applying an electric signal to the first semiconductor device and evaluating the characteristics of the first semiconductor device;
- increasing the temperature of the molten metal;
- bringing said drop of the molten metal into contact with said electrode of the second semiconductor device, and electrically connecting said second semiconductor device and said probe;
- and
- applying an electric signal to the second semiconductor device and evaluating the characteristics of the second semiconductor device.
Dependencies are inferred from the claim text.