Gold thin film vapor growing method
AssigneeFujitsu Limited
InventorMasataka Hoshino
Life of this patent
Estimating the term…
Abstract
A method of growing, in a vapor phase, a gold film having high electro-migration resistance and a flat surface, and capable of being buried in contact holes disposed in an insulating film of an integrated circuit device, for example, at a practical growing rate. Dimethylgold hexafluoroacetylacetonato (DMAu(hfac)), for example, is used as a starting gas, and vapor growth is carried out under specific conditions by utilizing thermal CVD. Adhesion of the gold film can be improved by converting it to a two-layered film by the combination of plasma enhanced CVD with thermal CVD.
Claims15
A method for forming a gold film on a substrate by a chemical vapor deposition, comprising the steps of:
- supplying a gold source gas into a reactor;
- adjusting a temperature within the range of about 150.degree. to about 240.degree. C. in the reactor at a pressure of at least 10 Torr to attain a kinetically controlled region in the reactor;
- and
- depositing a gold film from the gold source gas onto the substrate, the gold film being deposited onto said substrate substantially without forming needle-shape crystals.
A gold film vapor growing method comprising the steps of:
- adding, to a starting gas for forming a gold film, a plasma of low energy not completely decomposing said starting gas, producing a partially decomposed starting gas;
- and
- supplying said resulting partially decomposed starting gas to a single crystal substrate, forming a single crystal gold film on said single crystal substrate.
A method for forming first and second gold films on a substrate by chemical vapor deposition, comprising the steps of:
- supplying a gold source gas into a reactor;
- adjusting a temperature in the reactor at a pressure of at least 10 Torr to attain a kinetically controlled region in the reactor;
- depositing the first gold film, from the gold source gas, onto the substrate by a plasma enhanced chemical vapor deposition process, said first gold film being deposited onto said substrate substantially without forming needle-shape crystals;
- successively forming said second gold film on said first gold film by an in-situ thermal chemical vapor deposition process.
Dependencies are inferred from the claim text.