Compound semiconductors and a method for thin film growth
AssigneeTexas Instruments Incorporated
InventorsYung-Chung Kao, Francis G. Celii
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Abstract
A molecular beam epitaxy (MBE) system (10) is provided to grow thin film, epitaxy layers (44, 46, 48, 50) on compound semiconductor substrates (40). A mass spectrometer detector (95) is used to monitor and control the flux from selected sources (21, 23, 25, 27) within the MBE system (10). A uniform layer of indium gallium arsenide (46, 50) may be grown on a semiconductor substrate (40) by controlling the indium flux with respect to substrate (40) temperature and time. An epitaxy layer (46) of indium gallium arsenide with uniform mole fraction concentration and reduced lattice strain is produced.
Claims7
A system for growing epitaxy layers on a compound semiconductor substrate, said system comprising:
- a vacuum chamber having a substrate holder;
- a plurality of cells to hold atomic and/or molecular sources;
- means for selectively opening and closing said cells;
- a mass spectrometry detector positioned to sense the level of atoms or molecules in said chamber, said detector generating a signal proportionate to said level of atoms or molecules;
- and
- memos for adjusting the flux from said cells and the temperature of said substrate holder in response to said signal.
A system for forming thin film layers on a semiconductor substrate, said system comprising:
- a temperature-controllable substrate holder;
- a plurality of atomic and/or molecular sources;
- a mass spectrometer positioned to sense atoms or molecules emitted from said sources;
- means for varying the temperature of said substrate holder and the flux of at least one of said sources in response to a signal from said mass spectrometer.
Dependencies are inferred from the claim text.