Pressure contact type semiconductor device and heat compensator

A press-pack type semiconductor device comprising:

• (a) a semiconductor substrate including
• (a-1) a semiconductor substrate body having at least one junction of different conductivity type semiconductor layers, and first and second major surfaces, and
• (a-2) first and second conductive electrode layers of flat plate shape formed on said first and second major surfaces, respectively;
• (b) a first electrically conductive heat compensator having first and second major surfaces, said first major surface of said first heat compensator contacting an outer major surface of said first electrode layer;
• (c) a second electrically conductive heat compensator having first and second major surfaces, said first major surface of said second heat compensator contacting an outer major surface of said second electrode layer, said second heat compensator being shaped such that its outer peripheral edge protrudes outwardly from an outer peripheral edge of said semiconductor substrate, said second heat compensator including a recess formed in said first major surface thereof, said recess having a surface retracted from said first major surface of said second heat compensator, and said recess being formed along the outer peripheral edge of said semiconductor substrate and having a predetermined width including a projected portion of the outer peripheral edge of said semiconductor substrate;
• (d) a bonding retentive material applied to said recess, the outer peripheral edge of said semiconductor substrate, its adjacent portion, and the outer periphery of said first heat compensator for fixing together the outer peripheral edge of said semiconductor substrate and its adjacent portion, said first heat compensator, and said second heat compensator, and
• said bonding retentive material (d) includes
• (d-1) a first portion for filling said recess, and
• (d-2) a second portion contacting said first portion;
• (e) first and second electrically conductive blocks, made substantially of copper, each having at least one major surface, said major surfaces of said first and second conductive blocks contacting said second major surfaces of said first and second heat compensators, respectively;
• and
• (f) housing means having two opposed openings for housing said semiconductor substrate, said first and second heat compensators, and said first and second conductive blocks in such a manner that parts of said first and second conductive blocks are exposed at said two openings, respectively, said housing means having substantially electrically insulating properties,
• the thermal expansion coefficient of said first heat compensator being closer to that of said semiconductor substrate than that of said first conductive block and,
• the thermal expansion coefficient of said second heat compensator being closer to that of said semiconductor substrate than that of said second conductive block.

A press-pack type semiconductor device comprising:

• (a) a semiconductor substrate including
• (a-1) a semiconductor substrate body having at least one junction of different conductivity type semiconductor layers, and first and second major surfaces, and
• (a-2) first and second conductive electrode layers of flat plate shape formed on said first and second major surfaces respectively;
• (b) a first electrically conductive heat compensator having first and second major surfaces, said first major surface of said first heat compensator contacting an outer major surface of said first electrode layer;
• (c) a second electrically conductive heat compensator having first and second major surfaces, said first major surface of said second heat compensator contacting an outer major surface of said second electrode layer, said second heat compensator being shaped such that its outer peripheral edge protrudes outwardly from an outer peripheral edge of said semiconductor substrate, said second heat compensator including a recess formed in said first major surface thereof, said recess having a surface retracted from said first major surface of said second heat compensator, and said recess being formed along the outer peripheral edge of said semiconductor substrate and having a predetermined width including a projected portion of the outer peripheral edge of said semiconductor substrate;
• (d) a bonding retentive material applied to said recess, the outer peripheral edge of said semiconductor substrate and its adjacent portion for fixing said outer peripheral edge of said semiconductor substrate and its adjacent portion on said second heat compensator;
• (e) first and second electrically conductive blocks each having at least one major surface, said major surfaces of said first and second conductive blocks contacting said second major surfaces of said first and second heat compensators, respectively;
• and
• (f) housing means having two opposed openings for housing said semiconductor substrate, said first and second heat compensators, and said first and second conductive blocks in such a manner that parts of said first and second conductive blocks are exposed at said two openings, respectively, said housing means having substantially electrically insulating properties,
• the thermal expansion coefficient of said first heat compensator being closer to that of said semiconductor substrate than that of said first conductive block, and
• the thermal expansion coefficient of said second heat compensator being closer to that of said semiconductor substrate than that of said second conductive block.

A press-pack type semiconductor device comprising:

• (a) a semiconductor substrate including
• (a-1) a semiconductor substrate body having at least one junction of different conductivity type semiconductor layers, and first and second major surfaces, and
• (a-2) first and second conductive electrode layers of flat plate shape formed on said first and second major surfaces, respectively;
• (b) a first electrically conductive heat compensator having first and second major surfaces, said first major surface of said first heat compensator contacting an outer major surface of said first electrode layer;
• (c) a second electrically conductive heat compensator having first and second major surfaces, said first major surface of said second heat compensator contacting an outer major surface of said second electrode layer, said second heat compensator being shaped such that its outer peripheral edge protrudes outwardly from an outer peripheral edge of said semiconductor substrate, said second heat compensator including a recess formed in said first major surface thereof, said recess having a surface retracted from said first major surface of said second heat compensator, and said recess being formed along the outer peripheral edge of said semiconductor substrate and having a predetermined width including a projected portion of the outer peripheral edge of said semiconductor substrate;
• (d) a bonding retentive material applied to said recess, the outer peripheral edge of said semiconductor substrate, its adjacent portion, and the outer periphery of said first heat compensator for fixing together the outer peripheral edge of said semiconductor substrate and its adjacent portion, said first heat compensator, and said second heat compensator;
• (e) first and second electrically conductive blocks, made substantially of copper, each having at least one major surface, said major surfaces of said first and second conductive blocks contacting said second major surfaces of said first and second heat compensators, respectively;
• and
• (f) housing means having two opposed openings for housing said semiconductor substrate, said first and second heat compensators, and said first and second conductive blocks in such a manner that parts of said first and second conductive blocks in such a manner that parts of said first and second conductive blocks are exposed at said two openings, respectively, said housing means having substantially electrically insulating properties,
• the thermal expansion coefficient of said first heat compensator being closer to that of said semiconductor substrate than that of said first conductive block, and
• the thermal expansion coefficient of said second heat compensator being closer to that of said semiconductor substrate than that of said second conductive block.

A press-pack type semiconductor device comprising:

• (a) a semiconductor substrate including
• (a-1) a semiconductor substrate body having at least one junction of different conductivity type semiconductor layers, and first and second major surfaces, and
• (a-2) first and second conductive electrode layers of flat plate shape formed on said first and second major surfaces respectively;
• (b) a first electrically conductive heat compensator having first and second major surfaces, said first major surface of said first heat compensator contacting an outer major surface of said first electrode layer;
• (c) a second electrically conductive heat compensator having first and second major surfaces, said first major surface of said second heat compensator contacting an outer major surface of said second electrode layer, said second heat compensator being shaped such that its outer peripheral edge protrudes outwardly from an outer peripheral edge of said semiconductor substrate, said second heat compensator including a first groove and a recess formed in said first major surface thereof, said recess having a surface retracted from said first major surface of said second heat compensator, and said recess being formed along the outer peripheral edge of said semiconductor substrate and having a predetermined width including a projected portion of the outer peripheral edge of said semiconductor substrate;
• (d) a bonding retentive material applied to said recess, the outer peripheral edge of said semiconductor substrate and its adjacent portion for fixing said outer peripheral edge of said semiconductor substrate and its adjacent portion on said second heat compensator;
• (e) first and second electrically conductive blocks each having at least one major surface, said major surfaces of said first and second conductive blocks contacting said second major surfaces of said first and second heat compensators, respectively;
• and
• (f) housing means having two opposed openings for housing said semiconductor substrate, said first and second heat compensators, and said first and second conductive blocks in such a manner that parts of said first and second conductive blocks are exposed at said two openings, respectively, said housing means having substantially electrically insulating properties,
• the thermal expansion coefficient of said first heat compensator being closer to that of said semiconductor substrate than that of said first conductive block, and
• the thermal expansion coefficient of said second heat compensator being closer to that of said semiconductor substrate than that of said second conductive block.

A press-pack type semiconductor device comprising:

• (a) a semiconductor substrate including
• (a-1) a semiconductor substrate body having at least one junction of different conductivity type semiconductor layers, and first and second major surfaces, and
• (a-2) first and second conductive electrode layers of flat plate shape formed on said first and second major surfaces respectively;
• (b) a first electrically conductive heat compensator having first and second major surfaces, said first major surface of said first heat compensator contacting an outer major surface of said first electrode layer;
• (c) a second electrically conductive heat compensator having first and second major surfaces, said first major surface of said second heat compensator contacting an outer major surface of said second electrode layer, said second heat compensator being shaped such that its outer peripheral edge protrudes outwardly from an outer peripheral edge of said semiconductor substrate, said second heat compensator including a first groove formed in said first major surface thereof;
• (d) a bonding retentive material applied to said first major surface of said second heat compensator outside said first groove, the outer peripheral edge of said semiconductor substrate and its adjacent portion for fixing said outer peripheral edge of said semiconductor substrate and its adjacent portion on said second heat compensator;
• (e) first and second electrically conductive blocks each having at least one major surface, said major surfaces of said first and second conductive blocks contacting said second major surfaces of said first and second heat compensators, respectively;
• and
• (f) housing means having two opposed openings for housing said semiconductor substrate, said first and second heat compensators, and said first and second conductive blocks in such a manner that parts of said first and second conductive blocks are exposed at said two openings, respectively, said housing means having substantially electrically insulating properties,
• the thermal expansion coefficient of said first heat compensator being closer to that of said semiconductor substrate than that of said first conductive block,
• the thermal expansion coefficient of said second heat compensator being closer to that of said semiconductor substrate than that of said second conductive block, and
• wherein said second heat compensator further includes a plurality of through-holes formed in said first groove and passing through to said second major surface thereof.