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US 5,489,797 AGranted
Local interconnect structure
AssigneeSGS-Thomson Microelectronics S.A.
InventorsTsiu C. Chan, Frank R. Bryant, John L. Walters
Life of this patent
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Abstract
An interconnect structure, and method for forming same, is suitable for use in integrated circuits such as SRAM devices. The structure uses masking of a polycrystalline silicon interconnect level to move a P-N junction to a region within a polycrystalline silicon interconnect line, rather than at the substrate. This P-N junction can then be shorted out using a refractory metal silicide formed on the polycrystalline silicon interconnect structure.
Claims7
An interconnect structure for an integrated circuit, comprising:
- a P-type conductive structure;
- an N-type conductive structure;
- a polycrystalline silicon interconnect element connecting the P-type and N-type conductive structures, wherein the interconnect element is doped N-type in a first region in contact with the N-type conductive structure, and wherein the interconnect element is doped P-type in a second region in contact with the P-type conductive structure;
- and
- a conductive layer overlying the interconnect element and in contact with the first and second regions, wherein the conductive layer electrically shorts any P-N junction which exists between the first and second regions.
2 more elements
Dependencies are inferred from the claim text.