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US 5,489,796 AGranted
Integrated circuit resistor comprising amorphous silicon
AssigneeTexas Instruments Incorporated
InventorMark G. Harward
Life of this patent
Estimating the term…
Abstract
The device hereof provides an integrated circuit resistor (34) comprising amorphous or noncrystalline semiconducting material. Further advantages can be gained in area by forming the noncrystalline semiconductor resistor in a non-planar fashion (i. e. with a vertical construction) wherein a first electrical contact is made to the resistor on its bottom surface and a second electrical contact is made to the resistor on its top surface. Other devices, systems and methods are also disclosed.
Claims8
A circuit comprising:
- a) an input;
- b) an output;
- c) a transistor having a first, a second, and a third terminal, said first terminal being coupled to said output, said second terminal being coupled to said input, and said third terminal being coupled to a first bias voltage;
- and
- d) a doped, vertical noncrystalline silicon resistor having a first and a second terminal, said first terminal being connected to said first terminal of said transistor with a first metal alloy interposed therebetween, and said second terminal being connected to a second bias voltage connection with another metal alloy interposed therebetween.
2 more elements
A semiconductor memory cell comprising:
- a) a first transistor having a first, a second, and a third terminal;
- b) a second transistor having a first, a second, and a third terminal, said first terminal of said second transistor being coupled to said second terminal of said first transistor, said second terminal of said second transistor being coupled to said first terminal of said first transistor, and said third terminal of said second transistor being coupled to said third terminal of said first transistor;
- c) a first doped, vertical noncrystalline semiconductor resistor having a first and a second terminal, said first terminal being coupled to said first terminal of said first transistor with a first metal alloy interposed therebetween;
- and
- d) a second vertical noncrystalline semiconductor resistor having a first and a second terminal, said first terminal being coupled to said first terminal of said second transistor with another metal alloy interposed therebetween, and said second terminal being coupled to said second terminal of said first noncrystalline semiconductor resistor.
2 more elements
A semiconductor memory cell comprising:
- a first transistor having a first, a second, and a third terminal;
- a second transistor having a first, a second, and a third terminal, said first terminal of said second transistor being coupled to said second terminal of said first transistor, said second terminal of said second transistor being coupled to said first terminal of said first transistor, and said third terminal of said second transistor being coupled to said third terminal of said first transistor;
- a first doped, vertical noncrystalline silicon resistor having a first and a second terminal, said first terminal being coupled to said first terminal of said first transistor with a first metal alloy interposed therebetween;
- and
- a second doped vertical noncrystalline silicon resistor having a first and a second terminal, said first terminal being coupled to said first terminal of said second transistor with another metal alloy interposed therebetween, and said second terminal being coupled to said second terminal of said first noncrystalline semiconductor resistor.
2 more elements
Dependencies are inferred from the claim text.