Mask, mask producing method and pattern forming method using mask

A mask for forming a pattern on a wafer, said mask comprising:

• a first layer which is transparent with respect to an exposure light;
• and
• a mask pattern layer on said first layer, said mask pattern layer including at least first and second phase shift regions made up solely of a layer of phase shift material capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on a phase shift region, the first phase shift region having a different thickness than the second phase shift region, said phase shift regions being positioned on said first layer such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted light and at least a portion of exposure light which has not impinged on a phase shift region pass through the mask in close proximity to one another, whereby, after passing through the mask, said portions interact and interfere with one another to thereby produce at least one pattern segment having reduced light intensity which corresponds in shade to at least a part of the pattern formed on said wafer, the arrangement of the elements of said mask being such that said pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions such that the phase shift regions do not interact with an opaque region to produce any part of the pattern formed on said wafer.

A mask for forming a pattern on a wafer, said mask comprising:

• a first layer which is transparent with respect to an exposure light;
• a mask pattern layer on said first layer, said mask pattern layer including at least one phase shift region consisting solely of a single layer of phase shift material, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material, the phase shift material being capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift material, said phase shift region being positioned on said first layer such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted light and at least a portion of exposure light which has not impinged on the phase shift material pass through the mask in close proximity to one another, whereby, after passing through the mask, said portions interact and interfere with one another to thereby produce at least one pattern segment having reduced light intensity which corresponds in shape to at least a part of the pattern formed on said wafer, the arrangement of the elements of said mask being such that said pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions;
• and
• an opaque mask layer covering portions of said first layer, the opaque mask layer functioning in blocking light, but not shifting be phase of the light.

A mask for forming a pattern on a wafer, said mask comprising:

• a first layer which is transparent with respect to an exposure light;
• an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light;
• and
• a phase shift pattern including a phase shift layer disposed on said first layer and on said opaque layer in covering relationship to said edge portion, said phase shift layer being disposed on said opaque layer only in areas adjacent to said edge portion and being formed from a material that is capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift region,
• the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer, the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material.

A mask for forming a pattern on a wafer, said mask comprising:

• a first layer which is transparent with respect to an exposure light;
• an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light;
• and
• a phase shift layer including first and second phase shift portions on said first layer adjacent said edge portion, said phase shift portions being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift portions, said first and second phase shift portions having mutually different thicknesses,
• the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer, the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region end not covered by phase shift material.

A mask for forming a pattern on a wafer, said mask comprising:

• a first layer which is transparent with respect to an exposure light;
• an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light;
• and
• a phase shift pattern including mutually adjacent phase shift regions on said first layer adjacent said edge portion, said phase shift regions being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift region, said mutually adjacent phase shift regions having mutually different phase shift qualities,
• the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer, the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material.

A mask comprising:

• a first layer which is transparent with respect to an exposure light;
• an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light;
• and
• a phase shift pattern including a phase shift region on said first layer adjacent said edge portion, said phase shift region being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift region and including first and second portions which have mutually different thicknesses,
• the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region not covered by phase shift material.

A mask for forming a pattern on a wafer, said mask comprising:

• a first layer which is transparent with respect to an exposure light, said first layer having first and second areas;
• a mask pattern layer on the first area of the first layer, said mask pattern layer including at least one phase shift region consisting solely of a first phase shift layer of a phase shift material, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material, the phase shift material being capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift material, said phase shift region being positioned on said first area such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted fight and at least a portion of exposure light which has not impinged on the phase shift material pass through the mask in close proximity to one another, whereby, after passing through the mask said portions interact and interfere with one another to thereby produce a first pattern segment having reduced light intensity which corresponds in shape to at least a part of the pattern formed on the wafer, the arrangement of elements of the mask being such that said first pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions;
• an opaque layer having an edge portion covering a portion of the second area of said first layer, the opaque layer functioning in blocking light, but not shifting the phase of the light;
• and
• a phase shift pattern including a second phase shift layer of said phase shift material, said second phase shift layer being disposed on said second area of the first layer and on said opaque layer in covering relationship to said edge portion, said second phase shift layer being disposed on said opaque layer only in areas adjacent to said edge portion, whereby a zone of the pattern on said wafer having a width less than or equal to a predetermined width may be formed by impinging light on said first area of the first layer and a zone of the wafer pattern having a greater width than said predetermined width may be formed by impinging light on said second area.

A mask for forming a pattern on a wafer, said mask comprising:

• a first layer which is transparent with respect to an exposure light;
• an opaque layer covering a portion of said first layer and having edge portions, the opaque layer functioning in blocking light, but not shifting the phase of the light;
• and
• a phase shift pattern including phase shift regions on said first layer, each phase shift region being adjacent a respective one of said edge portions, said phase shift regions being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift regions and thereby forming a pattern having an arbitrary width,
• the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material.