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US 5,488,250 AGranted
Hall effect modulation of resistor values
AssigneeFalke Hennig
InventorFalke Hennig
Life of this patent
Estimating the term…
Abstract
A semiconductor structure is disclosed in which two regions of semiconductor material positioned adjacent to each other have different electron mobilities. By application of a magnetic field to the device, a Hall voltage is created across the boundary region between the regions of semiconductor material to modify their resistance. By detecting the change in resistance, the device can function as a memory cell, a programmable logic device, a head for hard disk drives, a measurement tool for measuring magnetic fields, or other apparatus.
Claims15
Apparatus including a structure comprising:
- a first region of silicon material having a selected electron mobility;
- a second region of silicon material having a different electron mobility than the first region of silicon material, the second region of silicon material being disposed adjacent the first region along a boundary region and in direct contact with the second region of silicon material;
- means for applying a magnetic field to both the first the second regions of silicon material in a direction perpendicular to the boundary region to thereby create a Hall voltage across the boundary region and modify the resistance of the first and second regions of silicon material;
- and
- means for detecting the change in resistance caused by the magnetic field.
2 more elements
A semiconductor memory cell comprising:
- a substrate;
- a first region of silicon material disposed in the substrate, the first region having a selected electron mobility;
- a second region of silicon material disposed in the substrate and having a different electron mobility than the first region of silicon material, the second region of silicon material being disposed adjacent the first region along a boundary region an in direct contact with the second region of silicon material,
- a region of magnetic material disposed on the substrate and disposed at least partially over the boundary region, the region of magnetic material having a perimeter;
- a region of electrically conductive material surrounding the region of magnetic material to form a current path;
- and
- wherein the region of electrically conductive material is electrically isolated from the substrate and the region of magnetic material.
4 more elements
A method of operating a memory cell which includes a substrate;
- a first region of silicon material having a selected electron mobility disposed in the substrate, a second region of silicon material having a different electron mobility than the first region of silicon material disposed in the substrate adjacent the first region, a region of magnetic material disposed on the substrate at least partially over the boundary region, a region of electrically conductive material disposed around the region of magnetic material to form a current path, the method comprising;
- introducing a current into the conductor to establish a magnetic field in the magnetic material in one of two directions to thereby effect the resistance of the first and second regions of silicon material;
- and
- detecting the resistance of at least one of the first and second regions.
1 more element
Apparatus including a structure comprising:
- a first region of silicon material having a selected hole mobility;
- a second region of silicon material having a different hole mobility than the first region of silicon material, the second region of silicon material being disposed adjacent the first region along a boundary region and in direct contact with the second region of silicon material;
- means for applying a magnetic field to both the first and second regions of silicon material in a direction perpendicular to the boundary region to thereby create a Hall voltage across the boundary region and modify the resistance of the first and second regions of silicon material;
- and
- means for detecting the change in resistance caused by the magnetic field.
2 more elements
A semiconductor memory cell comprising:
- a substrate;
- a first region of semiconductor material comprising silicon disposed in the substrate, the first region having a selected hole mobility;
- a second region of semiconductor material comprising silicon disposed in the substrate and having a different hole mobility than the first region of semiconductor material, the second region of semiconductor material being disposed adjacent the first region along a boundary region and in direct contact with the second region of semiconductor material;
- a region of magnetic material disposed on the substrate and disposed at least partially over the boundary region, the region of magnetic material having a perimeter;
- a region of electrically conductive material surrounding the region of magnetic material to form a current path;
- and
- wherein the region of electrically conductive material is electrically isolated from the substrate and the region of magnetic material.
4 more elements
Dependencies are inferred from the claim text.