Semiconductor light-emitting device with compound semiconductor layer

A semiconductor light-emitting device comprising:

• a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the periodic table;
• a first compound semiconductor layer formed directly on at least a portion of said semiconductor substrate, consisting of a compound semiconductor containing at least In and P, and patterned into a stripe;
• a second compound semiconductor layer formed directly on said first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table;
• a first cladding layer formed on said second compound semiconductor layer;
• a quantum well layer formed on said first cladding layer;
• a second cladding layer formed on said quantum well layer;
• a gap layer formed on said second cladding layer;
• and
• electrodes formed on said semiconductor substrate and said gap layer.

A semiconductor light-emitting device, comprising:

• a semiconductor substrate;
• and
• a compound semiconductor layer, formed on said semiconductor substrate, for emitting light upon being injected with a current,
• wherein a composition of said compound semiconductor layer is selected, in a graph showing a relationship between a bandgap energy and a lattice constant, from a composition range on a line segment connecting intersections between a region and a straight line indicating a lattice constant of the material of said semiconductor substrate when a material of said semiconductor substrate is determined, said region being formed by characteristic values of compounds each consisting of one element selected from the group consisting of Cd, Zn and Mg, and an element in the sixth group of the periodic table.

A semiconductor light-emitting device comprising:

• a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the periodic table;
• a first compound semiconductor layer formed directly on at least a portion of said semiconductor substrate and consisting of a compound semiconductor containing at least In and P;
• and
• a second compound semiconductor formed directly on said first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table,
• wherein in said second compound semiconductor, a carrier concentration in a portion except for a portion for performing current confinement is set to be higher than a carrier concentration in the portion for performing current confinement in order to lower a hetero barrier between said first and second compound semiconductor layers.

A semiconductor light-emitting device comprising:

• a semiconductor substrate;
• and
• a compound semiconductor layer, formed on said semiconductor substrate, for emitting light upon being injected with a current,
• wherein said semiconductor substrate and said compound semiconductor layer have lattice constants which are the same, and said semiconductor compound layer comprises Cd, Zn, Mg and only one element selected from the group consisting of elements in the sixth group of the periodic table.