Chemical vapor deposition method of growing oxide films with giant magnetoresistance

A method of forming on a substrate a giant magnetoresistive (GMR) oxide material of the formula La.sub.x A.sub.1-x MnO.sub.3

• wherein:
• A is selected from the group consisting of barium, calcium, and strontium;
• and
• x is a number in the range of from 0.2 to 0.4,
• said method comprising the steps of:
• providing metalorganic compounds B, C and D in solution, as source reagent solution precursor for said GMR oxide material,
• wherein:
• B is a beta-diketonate or beta-ketoester adduct of lanthanum;
• C is a beta-diketonate or beta-ketoester adduct of A;
• and
• D is a beta-diketonate or beta-ketoester adduct of manganese;
• wherein:
• each of the B, C and D adducting ligands is the same as the others;
• and
• the molar concentration of B in said source reagent solution is from 0.002 to 0.2 moles/liter of solution;
• the molar concentration of C in said source reagent solution is from 0.002 to 0.2 moles/liter of solution;
• and
• the molar concentration of D in said source reagent solution is from 0.01 to 0.5 moles/liter of solution;
• vaporizing the source reagent solution precursor to form a multicomponent vapor comprising B, C, and D;
• directing the multicomponent vapor into a chemical vapor deposition reactor having a substrate disposed therein, for deposition of lanthanum, A, and manganese from the multicomponent vapor onto the substrate;
• maintaining a generally constant pressure in the chemical vapor deposition reactor of oxidizing gas therein, wherein the oxidizing gas is selected from the group consisting of oxygen and N.sub.2 0;
• and
• maintaining the substrate at a temperature in the range of 600.degree. C. to 700.degree. C. during said deposition of lanthanum, A, and manganese from the multicomponent vapor onto the substrate.