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US 5,484,664 AGranted
Hetero-epitaxially grown compound semiconductor substrate
AssigneeFujitsu Limited
InventorsKuninori Kitahara, Nobuyuki Ohtsuka, Masashi Ozeki
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Abstract
A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
Claims4
A semiconductor structure comprising:
- a silicon substrate;
- a single crystal buffer layer of a compound containing a group III element and a group V element and selected from the group consisting of aluminum arsenide, aluminum nitride and aluminum phosphide, on the silicon substrate;
- wherein the group III element and the group V element are stacked in alternate monoatomic layers on the silicon substrate;
- and
- a gallium arsenide single crystal layer on the buffer layer.
2 more elements
Dependencies are inferred from the claim text.