Method of forming cubic boron nitride films
AssigneeBoard of Governors of Wayne State University
InventorRoger W. Pryor
Life of this patent
Estimating the term…
Abstract
A novel method of forming large area single crystal cubic boron nitride films on a silicon substrate by first treating the surface of the substrate with atomic hydrogen and then depositing a cubic boron nitride film by a reactive biased laser ablation technique.
Claims20
A method of forming large area single crystal boron nitride films on silicon substrates comprising the steps of:
- providing a single crystal silicon substrate having a top surface;
- treating said top surface of the silicon substrate with plasma excited atomic hydrogen;
- and
- depositing a large area single crystal cubic boron nitride layer on said treated top surface in a reactive gas environment.
A method of forming a large area single crystal cubic boron nitride film on a silicon substrate comprising the steps of:
- providing a silicon substrate having a top surface;
- treating said top surface of the silicon substrate with plasma excited atomic hydrogen;
- and
- depositing a large area single crystal cubic boron nitride layer onto said treated surface of the silicon substrate by laser ablating a hexagonal boron nitride target under biased conditions in a nitrogen/argon atmosphere, whereby said layer of cubic boron nitride formed has improved purity, crystallinity and adhesion properties.
A single crystal cubic boron nitride coated silicon article comprising:
- a single crystal silicon substrate having its top surface treated by plasma excited atomic hydrogen;
- and
- a single crystal cubic boron nitride film deposited on said silicon substrate by a reactive, biased laser ablation technique conducted in a nitrogen/argon atmosphere.
A large area single crystal cubic boron nitride film formed by the process comprising the step of depositing said film on a surface of a silicon substrate that is pretreated by plasma excited atomic hydrogen by using a reactive biased laser ablation technique in which at least one bias ring is utilized to further energize the laser plume in a nitrogen/argon atmosphere.
Dependencies are inferred from the claim text.