Method for fabricating a self limiting silicon based interconnect for testing bare semiconductor dice

A method for fabricating an interconnect for testing a semiconductor die comprising:

• forming a raised contact member on a substrate said contact member sized and spaced to contact a contact location on the die;
• forming a silicon containing layer on the substrate and contact member;
• forming an insulating layer on the silicon containing layer;
• etching the insulating layer on the contact member;
• depositing a metal layer on the silicon containing layer and on the insulating layer;
• heating the silicon containing layer and metal layer to form a silicide layer on the contact member;
• etching the metal layer, removing the insulating layer, and then etching the silicon containing layer selective to the silicide layer to leave a tip of the contact member covered by the silicide layer;
• and
• forming a conductive trace in contact with the silicide layer.

A method for forming an interconnect for establishing electrical contact with a bond pad of a semiconductor die, comprising:

• forming a raised contact member on a substrate having a projecting apex;
• forming a first insulating layer on the contact member and substrate;
• forming a silicon containing layer on the first insulating layer;
• forming a second insulating layer on the silicon containing layer;
• forming a mask over the substrate while leaving the contact member exposed;
• removing the second insulating layer on the contact member using the mask;
• removing the mask;
• depositing a metal layer on the contact member and substrate;
• heating the metal layer and silicon containing layer to form a silicide layer;
• etching the metal layer and the silicon containing layer selective to the silicide layer to form a silicide tip on the contact member;
• removing the second insulating layer;
• forming a conductive trace in contact with the silicide layer;
• and
• attaching a bond wire to the conductive trace.

A method for fabricating an interconnect for testing a semiconductor die, said method comprising:

• forming a plurality of raised contact members on a substrate said contact members sized and spaced to engage electrically conductive contact locations on the die;
• forming a silicon containing layer and a metal layer on the contact members;
• reacting the silicon containing layer and the metal layer to form a metal silicide layer;
• removing an unreacted portion of the silicon containing layer and an unreacted portion of the metal layer while leaving the metal silicide layer;
• and
• forming conductive traces on the substrate in electrical communication with the metal silicide layer.