High impedance anode structure for injection locked magnetron

A high impedance anode circuit for a magnetron, comprising:

• a plurality of first radial vanes disposed in and extending from an anode ring;
• a plurality of second radial vanes, interdigitating with said first vanes, disposed in and extending from said anode ring to define a vane structure;
• a first strap coaxially disposed along a side of said vane structure, said first strap interconnecting said plurality of first vanes;
• a second strap coaxially disposed along said side of said vane structure in facing proximity with said first strap, said second strap interconnecting said plurality of second vanes, said first and second straps providing a low capacitance;
• and
• said plurality of first and second vanes each having a respective high inductance portion adjacent said anode ring and a respective high capacitive portion extending from said high inductance portion, said high inductance portion being longer than said high capacitive portion so that said circuit has a high single cavity impedance;
• wherein said first vanes and said second vanes respectively are T-shaped.

A high impedance anode circuit for a magnetron, comprising:

• a plurality of T-shaped anode vanes disposed in and extending radially inward from an anode ring, each of said vanes having a respective wide high capacitance portion and a respective narrow high inductance portion disposed with and extending radially outward from said wide portion, wherein said narrow portion connects said vanes to said anode ring and wherein said high inductance portion is longer than said high capacitance portion;
• a first strap, coaxially disposed along an edge of said vanes, said first strap interconnecting alternating ones of said vanes;
• and
• a second strap coaxially disposed along said edge of said vanes, said second strap interconnecting remaining ones of said vanes not interconnected by said first strap, said first and second straps providing a low capacitance with respect to each other and with respect to adjacent ones of said vanes;
• wherein said first and second straps each having a respective rectangular cross-section with corresponding parallel facing surfaces.

A high impedance anode circuit for a magnetron, comprising:

• a plurality of first radial vanes disposed in and extending from an anode ring;
• a plurality of second radial vanes, interdigitating with said first vanes, and disposed in and extending from said anode ring to define a vane structure;
• a first strap coaxially disposed along a side of said vane structure, said first strap interconnecting said plurality of first vanes;
• a second strap coaxially disposed along said side of said vane structure in facing proximity with said first strap, said second strap interconnecting said plurality of second vanes, said first and second straps each providing a low capacitance;
• and
• said plurality of first and second vanes each having a respective high inductance portion adjacent said anode ring and respective high capacitance portion extending from said high inductance portion, said high inductance portion being longer than said high capacitance portion so that said circuit provides a high single cavity impedance.

A high impedance anode circuit for a magnetron, comprising:

• a plurality of first radial vanes disposed in and extending from an anode ring;
• a plurality of second radial vanes, interdigitating with said first vanes, disposed in and extending from said anode ring to define a vane structure;
• a first strap interconnecting said plurality of first vanes;
• a second strap interconnecting said plurality of second vanes, said first and second straps each having a respective rectangular cross-section with substantially corresponding parallel facing surfaces;
• said plurality of first and second vanes each having a respective high inductance portion adjacent said anode ring and a respective high capacitive portion extending from said high inductance portion, said high inductance portion being longer than said high capacitive portion so that said circuit has a high single cavity impedance;
• wherein said first vanes and said second vanes respectively are T-shaped.