Method for removing etching residue using a hydroxylamine-containing composition
AssigneeEKC Technology, Inc.
InventorWai M. Lee
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Abstract
A method for removing resists and etching residue from substrates using a stripping and cleaning composition containing hydroxylamine and at least one alkanolamine is described. Further, a method for removing etching residue from semiconductor substrates using a cleaning composition containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition of the method.
Claims11
A method of removing etching residue from a resist-free substrate comprising contacting a substrate having etching residue present thereon with a composition consisting essentially of from about 5-50 weight % of hydroxylamine and from about 10-80 weight % of at least one alkanolamine which is miscible with said hydroxylamine and a balance of water at a temperature and for a time sufficient to remove said etching residue from said resist-free substrate wherein said resist was removed from said substrate by means other than said composition.
A method of removing etching residue from a substrate comprising contacting a substrate having etching residue present thereon with a composition consisting essentially of from about 5-50 weight % of hydroxylamine, from about 10-80 weight % of at least one alkanolamine which is miscible with said hydroxylamine, at least one chelating agent, and water at a temperature and for a time sufficient to remove said etching residue from said substrate.
Dependencies are inferred from the claim text.