Semiconductor laser device with integrated reflector on a (511) tilted lattice plane silicon substrate
AssigneeMatsushita Electronics Corporation
InventorsHideyuki Nakanishi, Akio Yoshikawa, Hirokazu Shimizu
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AssigneeMatsushita Electronics Corporation
InventorsHideyuki Nakanishi, Akio Yoshikawa, Hirokazu Shimizu
Estimating the term…
Radiating light from a semiconductor laser element is radiated in a direction normal to the surface of a photodetector substrate. The semiconductor laser element and photodetector are disposed on the same plane. Specifically, a reflecting mirror surface formed of a slanting surface of (111) lattice plane having a ridge line of <110> direction is disposed on a silicon substrate of (100) lattice plane having an off-angle of 4.degree. to 14.degree. about an axis of <110> direction or on a silicon substrate of (511) lattice plane having an off-angle of 1.degree. to 11.degree. about an axis of <110> direction. The semiconductor laser chip is disposed at a position opposing to the reflecting mirror surface.
A semiconductor laser device comprising:
Dependencies are inferred from the claim text.