Method of ultra-high frequency current amplification using MOSFET devices

A method of ultra-high frequency current amplification comprising the steps of:

• applying an ultra-high radio frequency current signal to an input line of a first Metal Oxide Silicon Field Effect Transistor (MOSFET) amplification stage having an output line wherein said first MOSFET amplification stage generates a first amplified ultra-high radio frequency current signal that has a predetermined relationship to said applied ultra-high radio frequency current signal;
• and
• connecting said output line of said first MOSFET amplification stage directly to an input line of a second MOSFET amplification stage having an output line wherein;
• a signal on said output line of said first MOSFET amplification stage and a signal on said input line of said second MOSFET amplification stage are the same signal;
• said second MOSFET amplification stage generates a second amplified ultra-high radio frequency current signal that has a predetermined relationship to said first amplified ultra-high radio frequency current signal at said output line of said second MOSFET amplification stage:
• and
• said ultra-high radio frequency current signal applied to said input line of said first MOSFET amplification stage includes ultra-high radio frequency current signals having a direct current offset.

A method of ultra-high frequency current amplification using Metal Oxide Silicon Field Effect Transistors (MOSFETs), said method comprising the steps of:

• passing an ultra-high frequency current signal through a first Metal Oxide Silicon Field Effect Transistor (MOSFET), having a first channel width, from a first electrode line to a second electrode line of said first MOSFET and coupling said first electrode line of said first MOSFET to
• (i) a control electrode line of said first MOSFET;
• and
• (ii) a control electrode line of a second MOSFET having a second channel width;
• and
• coupling said second electrode line of said first MOSFET and a second electrode line of said second MOSFET to a first predetermined reference voltage, said first and second MOSFETs being of a first selected channel type and having said first and second channel widths, respectively, selected so as to result in a predetermined first amplification of said applied current signal at a first electrode line of said second MOSFET;
• passing said amplified current signal at said first electrode line of said second MOSFET through a third MOSFET, having a third channel width, from a first electrode line to a second electrode line of said third MOSFET and coupling said first electrode line of said third MOSFET to:
• (i) a control electrode line of said third MOSFET;
• and
• (ii) a control electrode line of a fourth MOSFET having a fourth channel width;
• and
• coupling said second electrode line of said third MOSFET and a second electrode line of said fourth MOSFET to a second predetermined reference voltage, said third and fourth MOSFETs being of a second selected channel type, different from said first selected channel type, and having said third and fourth channel widths, respectively, selected so as to result in a predetermined second amplification of said applied current signal at a first electrode line of said fourth MOSFET.

A method of ultra-high frequency current amplification comprising the steps of:

• passing a current signal through a first Metal Oxide Silicon Field Effect Transistor (MOSFET), having a first channel width, from a drain electrode line to a source electrode line of said first MOSFET and coupling said drain electrode line of said first MOSFET to
• (i) a gate electrode line of said first MOSFET;
• and
• (ii) a gate electrode line of a second MOSFET having a second channel width;
• and
• coupling said source electrode line of said first MOSFET and a source electrode line of said second MOSFET to a first predetermined reference voltage, said first and second MOSFETs being of a first selected channel type and having said first and second channel widths, respectively, selected so as to result in a predetermined first amplification of said applied current signal at a drain electrode line of said second MOSFET;
• coupling said drain electrode line of said second MOSFET to
• (i) a drain electrode line and a gate electrode line of a third MOSFET having a third channel width and;
• (ii) a gate electrode line of a fourth MOSFET having a fourth channel width;
• and
• coupling a source electrode line of said third and fourth MOSFETs to a second predetermined reference voltage, said third and fourth MOSFETs being of a second selected channel type, different from said first selected channel type, and having said third and fourth channel widths, respectively, selected so as to result in a predetermined second amplification of said applied current signal at a drain electrode line of said fourth MOSFET.

A current amplification method comprising the steps of:

• amplifying an ultra-high frequency current signal using a first plurality of Metal Oxide Silicon Field Effect Transistors (MOSFETs) to generate an amplified ultra-high frequency current signal;
• and
• amplifying said amplified ultra-high frequency current signal using a second plurality of MOSFETs, wherein
• said first plurality of MOSFETs is directly connected to said second plurality of MOSFETs such that a signal on an output line of said first plurality of MOSFETs and a signal on an input line of said second plurality of MOSFETs are the same signal;
• and
• said ultra-high radio frequency current signal includes ultra-high radio frequency current signals having a direct current offset.

A method of broad-band current amplification comprising the steps of:

• applying a current signal to an input line of a first Metal Oxide Silicon Field Effect Transistor (MOSFET) amplification stage having an output line wherein said first MOSFET amplification stage generates a first amplified current signal that has a predetermined relationship to said applied current signals, wherein said current signal applied to said input line of said first MOSFET amplification stage is a current signal having a frequency in the range from about a zero frequency to ultra-high frequencies;
• and
• connecting said output line of said first MOSFET amplification stage directly to an input line of a second MOSFET amplification stage having an output line wherein;
• a signal on said output line of said first MOSFET amplification stage and a signal on said input line of said second MOSFET amplification stage are the same signal;
• and
• said second MOSFET amplification stage generates a second amplified current signal that has a predetermined relationship to said first amplified current signal at said output line of said second MOSFET amplification stage.

A method of broad-band current amplification comprising the steps of:

• amplifying a current signal using a first plurality of Metal Oxide Silicon Field Effect Transistors (MOSFETs) to generate an amplified current signal, wherein said current signal amplified by said first plurality of MOSFETS is a current signal having a frequency in the range from about a zero frequency to an ultra-high frequency;
• and
• amplifying said amplified current signal using a second plurality of MOSFETs, wherein
• said first plurality of MOSFETs is directly connected to said second plurality of MOSFETs such that a signal on an output line of said first plurality of MOSFETs and a signal on an input line of said second plurality of MOSFETs are the same signal.