Semiconductor circuit device capable of reducing influence of a parasitic capacitor

A semiconductor circuit device comprising a semiconductor substrate, a differential amplifier circuit which is formed on said semiconductor substrate and which comprises first and second input terminals, and a circuit element formed on said semiconductor substrate and connected to one of said first and said second input terminals, said semiconductor circuit device having a first parasitic capacitor formed between said circuit element and said semiconductor substrate, wherein:

• said semiconductor circuit device further comprises a dummy circuit element formed on said semiconductor substrate so as to adjoin said circuit element for forming between said dummy circuit element and said semiconductor substrate a second parasitic capacitor which is equivalent to said first parasitic capacitor, said dummy circuit element being connected to another one of said first and said second input terminals.